Abstract. Silicon carbide nanocrystals embedded in a SiO2 matrix on monocrystalline Si substrates were prepared by radio frequency (RF) co-sputtering with Si, C and SiO2 targets, and subsequent high-temperature annealing. The structure of the films was determined by Fourier transform infrared spectroscopy. Photoluminescence (PL) from the composite films was studied as a function of annealing temperature. It was found that the PL spectra of the films are very sensitive to the annealing temperature. Blue band (490 nm) and green band (~546 nm) visible PL, originating from SiC nanoparticles and C nanoclusters, respectively, were observed at room temperature. 1
During the formation of Si nanocrystals (Si NC) in SixC1−x layers via solid-phase crystallization, t...
Carbon-doped hydrogenated silicon oxide (SiOCH) low-k films have been prepared using 13.56 MHz disch...
Amorphous hydrogenated Si1-xCx / SiC multilayers consisting of alternating Si1-xCx and stoichiometri...
Amorphous Sic films are deposited on Si (111) substrates by rf magnetron sputtering and then anneale...
This study focuses on various aspects of nanocrystals embedded in a dielectric matrix. In the first ...
The nanocrystalline silicon embedded in amorphous silicon carbide matrix was prepared by varying rf ...
Silicon carbide and silicon rich carbide (SiC and SRC) thin films were prepared by PECVD and anneale...
Si nanocrystals embedded in a wide bandgap material have been of interest for various electronic dev...
Amorphous SiC:H thin films were grown by hot wire chemical vapour deposition from a SiH4/CH4/H2 mixt...
In this work, we study the changes in the optical properties of 300-nm-thick hydrogenated amorphous ...
In this paper the preparation of Si nanocrystals within a SiC matrix using two different methods, na...
In this work we report on the deposition of hydrogenated nanocrystalline silicon carbide (nc-SiC:H) ...
A novel epitaxial growth of SiC nanocrystals embedded in carbon rich amorphous SiC films deposited u...
Layers of Si nanocrystals in a dielectric matrix have promising properties as an absorber layer in a...
International audienceSilicon carbide (SiC) is an indirect wide band gap semiconductor that is utili...
During the formation of Si nanocrystals (Si NC) in SixC1−x layers via solid-phase crystallization, t...
Carbon-doped hydrogenated silicon oxide (SiOCH) low-k films have been prepared using 13.56 MHz disch...
Amorphous hydrogenated Si1-xCx / SiC multilayers consisting of alternating Si1-xCx and stoichiometri...
Amorphous Sic films are deposited on Si (111) substrates by rf magnetron sputtering and then anneale...
This study focuses on various aspects of nanocrystals embedded in a dielectric matrix. In the first ...
The nanocrystalline silicon embedded in amorphous silicon carbide matrix was prepared by varying rf ...
Silicon carbide and silicon rich carbide (SiC and SRC) thin films were prepared by PECVD and anneale...
Si nanocrystals embedded in a wide bandgap material have been of interest for various electronic dev...
Amorphous SiC:H thin films were grown by hot wire chemical vapour deposition from a SiH4/CH4/H2 mixt...
In this work, we study the changes in the optical properties of 300-nm-thick hydrogenated amorphous ...
In this paper the preparation of Si nanocrystals within a SiC matrix using two different methods, na...
In this work we report on the deposition of hydrogenated nanocrystalline silicon carbide (nc-SiC:H) ...
A novel epitaxial growth of SiC nanocrystals embedded in carbon rich amorphous SiC films deposited u...
Layers of Si nanocrystals in a dielectric matrix have promising properties as an absorber layer in a...
International audienceSilicon carbide (SiC) is an indirect wide band gap semiconductor that is utili...
During the formation of Si nanocrystals (Si NC) in SixC1−x layers via solid-phase crystallization, t...
Carbon-doped hydrogenated silicon oxide (SiOCH) low-k films have been prepared using 13.56 MHz disch...
Amorphous hydrogenated Si1-xCx / SiC multilayers consisting of alternating Si1-xCx and stoichiometri...
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