A 2.14 GHz inverse class F Si-LDMOS power amplifier with voltage second harmonic peaking

with a voltage second harmonic peaking and third harmonic short operating at 2.14GHz for WCDMA base station applications has been developed. The load network is based on transmission line harmonic traps and provides high impedance at the second and low impedance at the third harmonic to the PA. The PA uses a packaged Silicon LDMOS transistor and provides an output power of 13.8W and a drain efficiency of 66%. Due to the high gain of 13.4dB an excellent power added efficiency (PAE) of 64 % is obtained. The 6dB back off PAE is 35%. To the author’s knowledge, the highest obtained output power and PAE for a packaged Si-LDMOS transistor based on this architecture at this frequency is presented