200 GHz maxf, τf InP/In0.53Ga0.47As/InP Metamorphic Double Heterojunction Bipolar Transistors on GaAs Substrates

InP/In0.53Ga0.47As/InP Double Heterojunction Bipolar Transistors were grown on GaAs substrates using a high-thermal-conductivity InP metamorphic buffer layer. InP metamorphic buffer was selected because it has a large thermal conductivity, which is very important in high power device operation. 200 GHz maxf and 200 GHz τf were obtained. This maxf is the highest reported for a metamorphic HBT. The breakdown voltage BVCEO was 6 V and the DC current gain β was 27. The base-collector reverse leakage current was 54 nA at VCB =0.3V