Add to ORKGAb initio methods are employed to examine the structure of the Ge self-interstitial and its aggregates. The energetics of the defects investigated here are broadly similar to the results found for the corresponding defects in Si. We report the predicted electronic structures of these defects
International audienceWe report an ab initio study of the semiconducting Mg2X (with X = Si, Ge) comp...
We present an improved method to calculate defect formation energies that overcomes the band-gap pro...
The electronic structure of a vacancy in silicon-germanium is studied using ab initio total-energy m...
Understanding the most elemental defects in semiconductors is a fundamental step to grasp the countl...
Presented in this thesis are the results of computational investigations into radiation defects in s...
Low temperature irradiation experiments show a remarkable contrast between Si and Ge. suggesting tha...
Understanding the most elemental defects in semiconductors is a fundamental step to grasp the countl...
Recent studies have shown evidence for the aggregation of self-interstitials in ion-implanted Si, re...
The principal approximation in the Green's-matrix method for calculating the electronic structure an...
The formation energies of intrinsic point defects in Si and Ge were calculated by means of Density F...
A new method based on representation matrices, for classifying and enumerating close-packed clusters...
In the present study density functional theory calculations have been used to calculate the binding ...
In the present study density functional theory calculations have been used to calculate the binding ...
This thesis covers the application of the local density approximation of density functional theory t...
The electronic structure of a vacancy in silicon-germanium is studied using ab initio total-energy m...
International audienceWe report an ab initio study of the semiconducting Mg2X (with X = Si, Ge) comp...
We present an improved method to calculate defect formation energies that overcomes the band-gap pro...
The electronic structure of a vacancy in silicon-germanium is studied using ab initio total-energy m...
Understanding the most elemental defects in semiconductors is a fundamental step to grasp the countl...
Presented in this thesis are the results of computational investigations into radiation defects in s...
Low temperature irradiation experiments show a remarkable contrast between Si and Ge. suggesting tha...
Understanding the most elemental defects in semiconductors is a fundamental step to grasp the countl...
Recent studies have shown evidence for the aggregation of self-interstitials in ion-implanted Si, re...
The principal approximation in the Green's-matrix method for calculating the electronic structure an...
The formation energies of intrinsic point defects in Si and Ge were calculated by means of Density F...
A new method based on representation matrices, for classifying and enumerating close-packed clusters...
In the present study density functional theory calculations have been used to calculate the binding ...
In the present study density functional theory calculations have been used to calculate the binding ...
This thesis covers the application of the local density approximation of density functional theory t...
The electronic structure of a vacancy in silicon-germanium is studied using ab initio total-energy m...
International audienceWe report an ab initio study of the semiconducting Mg2X (with X = Si, Ge) comp...
We present an improved method to calculate defect formation energies that overcomes the band-gap pro...
The electronic structure of a vacancy in silicon-germanium is studied using ab initio total-energy m...