CuInS2 semiconductor films were prepared at three substrate temperatures on glass substrates by spray pyrolysis method. The X-rays diffraction (XRD) spectra of the films have shown that the films produced are polycrystalline and chalcopyrite in structure. The texture coefficients were evaluated for different substrate temperatures. Scanning electron microscopy (SEM) surface micrographs show different morphologies of the surface grains, which are dependent on temperature
The copper indium di selenide $(CuInSe_{2})$ Compound was prepared by direct reaction of high-purity...
CuInS2 thin films were prepared onto indium tin oxide (ITO) substrates by sulfurization of electrode...
Thin films of n-type CuInS2 (CIS) have been grown onto a indium-tin-oxide glass substrates using the...
123-127Present paper deals with synthesis and characterization of CuInS2 thin films prepared through...
International audienceCuInS2 multi-component semiconductors thin films were prepared by chemical spr...
AbstractCuInS2 films were deposited by spray pyrolysis method at 250 °C and 350 °C using aqueous sol...
Thin films of Cu0.5Ag0.5InSe2 were prepared on glass substrates held at temperatures in the range 47...
117-122Copper indium disulphide (CuInS2) thin films have been deposited on glass substrates by vary...
International audienceCuInS2 (chalcopyrite structure) thin films were synthesized at 250 degrees C u...
[[abstract]]GaP and CuInS2 thin films were deposited by ion-beam sputtering. Transmission electron m...
The spray pyrolysis conditions required to prepare single-phase CuInS2 films of good optical quality...
In this study, highly (1 1 2) oriented crystalline copper indium disulfide (CuInS2) thin films with ...
Polycrystalline CuInS2 films were fabricated by sulfurization of electrodeposited Cu and In metallic...
CuInS2 were prepared on Si 111 by MOMBE using standard MBE Cu and In sources and Ditertbutyldisulfi...
Thin amorphous CuInS2 films were deposited on the glass substrates by single source thermal evapora...
The copper indium di selenide $(CuInSe_{2})$ Compound was prepared by direct reaction of high-purity...
CuInS2 thin films were prepared onto indium tin oxide (ITO) substrates by sulfurization of electrode...
Thin films of n-type CuInS2 (CIS) have been grown onto a indium-tin-oxide glass substrates using the...
123-127Present paper deals with synthesis and characterization of CuInS2 thin films prepared through...
International audienceCuInS2 multi-component semiconductors thin films were prepared by chemical spr...
AbstractCuInS2 films were deposited by spray pyrolysis method at 250 °C and 350 °C using aqueous sol...
Thin films of Cu0.5Ag0.5InSe2 were prepared on glass substrates held at temperatures in the range 47...
117-122Copper indium disulphide (CuInS2) thin films have been deposited on glass substrates by vary...
International audienceCuInS2 (chalcopyrite structure) thin films were synthesized at 250 degrees C u...
[[abstract]]GaP and CuInS2 thin films were deposited by ion-beam sputtering. Transmission electron m...
The spray pyrolysis conditions required to prepare single-phase CuInS2 films of good optical quality...
In this study, highly (1 1 2) oriented crystalline copper indium disulfide (CuInS2) thin films with ...
Polycrystalline CuInS2 films were fabricated by sulfurization of electrodeposited Cu and In metallic...
CuInS2 were prepared on Si 111 by MOMBE using standard MBE Cu and In sources and Ditertbutyldisulfi...
Thin amorphous CuInS2 films were deposited on the glass substrates by single source thermal evapora...
The copper indium di selenide $(CuInSe_{2})$ Compound was prepared by direct reaction of high-purity...
CuInS2 thin films were prepared onto indium tin oxide (ITO) substrates by sulfurization of electrode...
Thin films of n-type CuInS2 (CIS) have been grown onto a indium-tin-oxide glass substrates using the...