Amorphous In2O3-Ga2O3-ZnO Thin Film Transistors and Integrated Circuits on Flexible and Colorless Polyimide Substrates H.-H. Hsieh et al. 1 Amorphous In2O3-Ga2O3-ZnO Thin Film Transistors and Integrated Circuits on Flexible and Colorless Polyimide

Abstract – A process was developed for fine fabrication of amorphous IGZO TFTs and integrated circuits on flexible and colorless polyimide substrates. TFTs with field-effect mobilities of ~10 cm2/Vs and ring oscillators with propagation delay of 0.35 µs per stage were achieved on the polyimide substrates