In state-of-the-art devices, it is well known that quantum and Coulomb effects play signif-icant role on the device operation. In this paper, we demonstrate that a novel effective potential approach in conjunction with a Monte Carlo device simulation scheme can accurately capture the quantum-mechanical size quantization effects. We also demon-strate, via proper treatment of the short-range Coulomb interactions, that there will be significant variation in device design parameters for devices fabricated on the same chip due to the presence of unintentional dopant atoms at random locations within the channel
The characterization of a 70nm MOSFET is simulated using a 2-D full-band Monte Carlo device simulato...
The characterization of a 70nm MOSFET is simulated using a 2-D full-band Monte Carlo device simulato...
Undesirable short-channel effects associated with the relentless downscaling of conventional CMOS de...
With the progress of integrated technology, the feature size of experimental electron devices have a...
Numerical simulations have been performed to study the single-charge-induced ON current fluctuations...
Though the concept of junctionless field effect transistor (JLFET) is old, it was not possible to fa...
Abstract. Effective quantum potentials describe the physics of quantum-mechanical electron transport...
A two-dimensional (2D) full band self-consistent ensemble Monte Carlo (MC) method for solving the qu...
Abstract. We describe quantum Monte Carlo methods for simulating quantum systems. These techniques a...
A fully 3-D atomistic quantum mechanical simulation is presented to study the random dopant-induced ...
The atomistic pseudopotential quantum mechanical calculations for million atom nanosized metal-oxide...
A methodology for incorporating quantum corrections into self-consistent atomistic Monte Carlo (MC) ...
Today, the MOSFET transistor reaches nanometric dimensions for which quantum effects cannot be negle...
We apply a two-dimensional quantum mechanical simulation scheme to study the effect of channel acces...
We present a fully 3D atomistic quantum mechanical simulation for nanometered MOSFET using a coupled...
The characterization of a 70nm MOSFET is simulated using a 2-D full-band Monte Carlo device simulato...
The characterization of a 70nm MOSFET is simulated using a 2-D full-band Monte Carlo device simulato...
Undesirable short-channel effects associated with the relentless downscaling of conventional CMOS de...
With the progress of integrated technology, the feature size of experimental electron devices have a...
Numerical simulations have been performed to study the single-charge-induced ON current fluctuations...
Though the concept of junctionless field effect transistor (JLFET) is old, it was not possible to fa...
Abstract. Effective quantum potentials describe the physics of quantum-mechanical electron transport...
A two-dimensional (2D) full band self-consistent ensemble Monte Carlo (MC) method for solving the qu...
Abstract. We describe quantum Monte Carlo methods for simulating quantum systems. These techniques a...
A fully 3-D atomistic quantum mechanical simulation is presented to study the random dopant-induced ...
The atomistic pseudopotential quantum mechanical calculations for million atom nanosized metal-oxide...
A methodology for incorporating quantum corrections into self-consistent atomistic Monte Carlo (MC) ...
Today, the MOSFET transistor reaches nanometric dimensions for which quantum effects cannot be negle...
We apply a two-dimensional quantum mechanical simulation scheme to study the effect of channel acces...
We present a fully 3D atomistic quantum mechanical simulation for nanometered MOSFET using a coupled...
The characterization of a 70nm MOSFET is simulated using a 2-D full-band Monte Carlo device simulato...
The characterization of a 70nm MOSFET is simulated using a 2-D full-band Monte Carlo device simulato...
Undesirable short-channel effects associated with the relentless downscaling of conventional CMOS de...