Add to ORKGElectrical properties of vacuum evaporated thin As2Se3-GeSe2-SnTe films have been studied. The thermal activation energy of the films with different SnTe concentration is determined by the temperature dependence of conductivity. From electrical investigations some basic physical characteristics of the investigated semiconductor films were calculated applying the Christov's theory for injected electron currents. Effective electron mass (mc/m) in the conduction band, relative dielectric permittivity ε of the films and the electron work function (χ) at the Al/(As2Se3-GeSe2-SnTe) interface as a function of SnTe content were determined
of Science. Electrical resistivity and thermoelectric power were measured for the (l-x)As«Se^x Sb.Se...
Amorphous Ge film, vacuum-evaporated on glass substrates, is known as a sort of semi-conductor. The ...
Se films were prepared by thermal evaporation technique in thickness range 150-8500 Angstrom. X-ray ...
A simple theory of electrical conductivity of a-As2Se3 and similar amorphous semiconductor has been ...
thin films of se:2.5% as were deposited on a glass substates by thermal coevaporation techniqi=ue un...
Measurements of the mobility and degree of transit pulse dispersion as a function of temperature bet...
654-660The ternary semiconductors SnTexSe1-x, (where 0≤ x ≤1), were prepared by fusion method. The...
A study of electrical properties of PECVD a-Ge-Se films has been conducted. Steady-state conductivit...
The electrical activation energy and optical band-gap of GeSe and GeSbSe thin films prepared by flas...
Thin films of As2Se3- GeSe2- SnTe system are investigated. The present investigation is a continuati...
D.c. and a.c. conductance measurements were performed on As0.40Se0.40Te0.20 thin films. The d.c. mea...
Thermal evaporation technique was used to prepare As20Se80−xTlx films from bulk materials; ($5\leqs...
Thin films of the glassy systems Ge-Se-Y (where Y is Ga, Tl or B) were prepared by vacuum evaporatio...
The effect of oblique deposition on the optical and electrical properties of As2S3 and As2Se3 thin f...
A mille-feuille structured amorphous selenium (a-Se)-arsenic selenide (As2Se3) multi-layered thin fi...
of Science. Electrical resistivity and thermoelectric power were measured for the (l-x)As«Se^x Sb.Se...
Amorphous Ge film, vacuum-evaporated on glass substrates, is known as a sort of semi-conductor. The ...
Se films were prepared by thermal evaporation technique in thickness range 150-8500 Angstrom. X-ray ...
A simple theory of electrical conductivity of a-As2Se3 and similar amorphous semiconductor has been ...
thin films of se:2.5% as were deposited on a glass substates by thermal coevaporation techniqi=ue un...
Measurements of the mobility and degree of transit pulse dispersion as a function of temperature bet...
654-660The ternary semiconductors SnTexSe1-x, (where 0≤ x ≤1), were prepared by fusion method. The...
A study of electrical properties of PECVD a-Ge-Se films has been conducted. Steady-state conductivit...
The electrical activation energy and optical band-gap of GeSe and GeSbSe thin films prepared by flas...
Thin films of As2Se3- GeSe2- SnTe system are investigated. The present investigation is a continuati...
D.c. and a.c. conductance measurements were performed on As0.40Se0.40Te0.20 thin films. The d.c. mea...
Thermal evaporation technique was used to prepare As20Se80−xTlx films from bulk materials; ($5\leqs...
Thin films of the glassy systems Ge-Se-Y (where Y is Ga, Tl or B) were prepared by vacuum evaporatio...
The effect of oblique deposition on the optical and electrical properties of As2S3 and As2Se3 thin f...
A mille-feuille structured amorphous selenium (a-Se)-arsenic selenide (As2Se3) multi-layered thin fi...
of Science. Electrical resistivity and thermoelectric power were measured for the (l-x)As«Se^x Sb.Se...
Amorphous Ge film, vacuum-evaporated on glass substrates, is known as a sort of semi-conductor. The ...
Se films were prepared by thermal evaporation technique in thickness range 150-8500 Angstrom. X-ray ...