Add to ORKGA two-dimensional hierarchical hydrodynamic (HD) model based MOSFET simulator has been developed. The HD equations are solved in the time-dependent (TD) decoupled manner. The simulator has been used to compare the results from nonparabolic, parabolic HD, energy balance, simplified HD, and drift-diffusion (DD) models
A one-dimensional device simulator based on the hydrodynamic model is developed for the simulation a...
A hydrodynamical model for electron transport in silicon semiconductors, which is free of any fittin...
Consiglio Nazionale delle Ricerche - Biblioteca Centrale - P.le Aldo Moro, 7, Rome / CNR - Consiglio...
A two-dimensional general hydrodynamic equation (HDE) solver has been developed. The solver is capab...
Local carrier heating and nonstationary effects in deep-submicron silicon devices can lead to substa...
The hydrodynamic (HD) model of semiconductor devices is solved numerically in three-dimensions (3-D)...
A finite difference upwind discretization scheme in two dimensions is presented in detail for the tr...
The hydrodynamic model has become popular in the last years in the field of analysis and simulation ...
Recent advances in technology leads to increasing high speed performance of submicrometer electron d...
A quantum mechanical treatment of electron inversion layers is incorporated in the hydrodynamic (HD)...
In this paper we compare the well-known and widely used hydrodynamical model of Blotekjaer-Baccarani...
A new numerical formulation for solving the hydrodynamic model of semiconductor devices is presented...
Theoretical and practical aspects of the design and implementation of the streamlinediffusion (SD) ...
Several kinds of models are proposed to analyze the electron flow through semicon-ductor devices. Es...
A self-consistent numerical transport model based on the hydrodynamic equations obtained from Boltzm...
A one-dimensional device simulator based on the hydrodynamic model is developed for the simulation a...
A hydrodynamical model for electron transport in silicon semiconductors, which is free of any fittin...
Consiglio Nazionale delle Ricerche - Biblioteca Centrale - P.le Aldo Moro, 7, Rome / CNR - Consiglio...
A two-dimensional general hydrodynamic equation (HDE) solver has been developed. The solver is capab...
Local carrier heating and nonstationary effects in deep-submicron silicon devices can lead to substa...
The hydrodynamic (HD) model of semiconductor devices is solved numerically in three-dimensions (3-D)...
A finite difference upwind discretization scheme in two dimensions is presented in detail for the tr...
The hydrodynamic model has become popular in the last years in the field of analysis and simulation ...
Recent advances in technology leads to increasing high speed performance of submicrometer electron d...
A quantum mechanical treatment of electron inversion layers is incorporated in the hydrodynamic (HD)...
In this paper we compare the well-known and widely used hydrodynamical model of Blotekjaer-Baccarani...
A new numerical formulation for solving the hydrodynamic model of semiconductor devices is presented...
Theoretical and practical aspects of the design and implementation of the streamlinediffusion (SD) ...
Several kinds of models are proposed to analyze the electron flow through semicon-ductor devices. Es...
A self-consistent numerical transport model based on the hydrodynamic equations obtained from Boltzm...
A one-dimensional device simulator based on the hydrodynamic model is developed for the simulation a...
A hydrodynamical model for electron transport in silicon semiconductors, which is free of any fittin...
Consiglio Nazionale delle Ricerche - Biblioteca Centrale - P.le Aldo Moro, 7, Rome / CNR - Consiglio...