We present a selection of our contributions to basic research on the lattice dynamical properties of group-III nitrides and their alloys. We used first-order Raman scattering to determine the zone-center phonons and their dependence on structural attributes such as stress, chemical composition, impurities, and doping. Results on the angular dispersion of the polar modes, strain distribution, coupled LO-phonon plasmon modes, multi-mode behavior in A
The lattice dynamics of the zinc-blende and wurtzite phases of GaN, AlN, and BN is studied using the...
Raman spectra are presented for the rare-earth nitrides SmN, GdN, DyN, ErN, and LuN measured with 63...
Die vorliegende Dissertation befasst sich mit der ramanspektroskopischen Charakterisierung von Galli...
We present a selection of our contributions to basic research on the lattice dynamical properties of...
We present results of Raman-scattering experiments on GaN doped with Si, C, and Mg, respectively, gr...
Micro-Raman spectroscopy is employed to study the anisotropic optical phonons of Si-doped GaN/Sapphi...
P doping of gallium nitride by incorporation of magnesium in the layers was controlled recently. Onl...
We report on Raman scattering measurements of all Raman-active phonons in wurtzite and zinc blende s...
Using the density-functional theory within the Full Potential Linear Augmented Plane-Wave (FP-LAPW) ...
500nm AlGaN thick layer with AlGaN/GaN MQW interlayer was grown on sapphire substrate for UV detecto...
The Raman scattering spectra of MBE-grown GaNAs epilayers were investigated. The resonant enhancemen...
Die Gruppe-III-Nitride und Zinkoxid stehen wegen ihres hohen Anwendungspotentials im Mittelpunkt des...
Structural and dynamical properties of the zinc-blende bulk phase and the (110) surface of the nitri...
Nonpolar a-plane [(1120)] GaN samples have been grown on r-plane [(1102)] sapphire substrates by low...
An adiabatic bond charge model has been applied to calculate the phonon dispersion and the density o...
The lattice dynamics of the zinc-blende and wurtzite phases of GaN, AlN, and BN is studied using the...
Raman spectra are presented for the rare-earth nitrides SmN, GdN, DyN, ErN, and LuN measured with 63...
Die vorliegende Dissertation befasst sich mit der ramanspektroskopischen Charakterisierung von Galli...
We present a selection of our contributions to basic research on the lattice dynamical properties of...
We present results of Raman-scattering experiments on GaN doped with Si, C, and Mg, respectively, gr...
Micro-Raman spectroscopy is employed to study the anisotropic optical phonons of Si-doped GaN/Sapphi...
P doping of gallium nitride by incorporation of magnesium in the layers was controlled recently. Onl...
We report on Raman scattering measurements of all Raman-active phonons in wurtzite and zinc blende s...
Using the density-functional theory within the Full Potential Linear Augmented Plane-Wave (FP-LAPW) ...
500nm AlGaN thick layer with AlGaN/GaN MQW interlayer was grown on sapphire substrate for UV detecto...
The Raman scattering spectra of MBE-grown GaNAs epilayers were investigated. The resonant enhancemen...
Die Gruppe-III-Nitride und Zinkoxid stehen wegen ihres hohen Anwendungspotentials im Mittelpunkt des...
Structural and dynamical properties of the zinc-blende bulk phase and the (110) surface of the nitri...
Nonpolar a-plane [(1120)] GaN samples have been grown on r-plane [(1102)] sapphire substrates by low...
An adiabatic bond charge model has been applied to calculate the phonon dispersion and the density o...
The lattice dynamics of the zinc-blende and wurtzite phases of GaN, AlN, and BN is studied using the...
Raman spectra are presented for the rare-earth nitrides SmN, GdN, DyN, ErN, and LuN measured with 63...
Die vorliegende Dissertation befasst sich mit der ramanspektroskopischen Charakterisierung von Galli...