Add to ORKGAnalytical results of 6H-SiC Piezoresistive Pressure Sensor, with an epilayer having an impurity concentration of 2 x 1019 cm-3 are provided. For a diaphragm thickness of 40mm, the typical room temperature full-scale output for maximum pressure of 300 psi was 14.27 mV and the full-scale output at 600°C for maximum pressure of 300 psi was 2.98 mV. The temperature coefficient of resistance (TCR) had negative values from room temperature to 600°C due to gradual drop in input resistance. The temperature coefficient of gauge factor (TCGF) averaged about 0.15%/°C. The results from this analytical analysis strengthen the viability of 6H-SiC as
This paper reports on the piezoresistive effect in p-type 3C-SiC thin film mechanical sensing at cry...
Piezoresistive mechanical sensors play a very important role in modern industries. MEMS pressure sen...
Abstract-The design of a capacitive-sensing pressure sensor for extreme environment is proposed in t...
A prototype monolithic 6H-SiC pressure sensor operational up to 350°C, with potential to operate up ...
Within these studies the piezoresistive effect was analyzed for 6H-SiC and 4H-SiC material doped wit...
Piezoresistive mechanical sensors play a very important role in modern industries. MEMS pressure sen...
The slow etching rate of conventional micro-machining processes is hindering the use of bulk silicon...
In different industrial applications, such as injection molding and/or hot rolling, it is necessary ...
AbstractIn this work, we report the fabrication and characterization of a SiC/SiO2/Si piezoresistive...
The slow etching rate of conventional micro-machining processes is hindering the use of bulk silicon...
This work focusses on the design and fabrication of surface micromachined pressure sensors, designed...
4H-silicon carbide based sensors are promising candidates for replacing prevalent silicon-based coun...
A 4H-SiC pressure sensor with piezoresistive transducers, for harsh environment applications, e.g., ...
Pressure measurement under harsh environments, especially at high temperatures, is of great interest...
We have performed the initial characterization of single crystal 4H silicon carbide (4H-SiC) pressur...
This paper reports on the piezoresistive effect in p-type 3C-SiC thin film mechanical sensing at cry...
Piezoresistive mechanical sensors play a very important role in modern industries. MEMS pressure sen...
Abstract-The design of a capacitive-sensing pressure sensor for extreme environment is proposed in t...
A prototype monolithic 6H-SiC pressure sensor operational up to 350°C, with potential to operate up ...
Within these studies the piezoresistive effect was analyzed for 6H-SiC and 4H-SiC material doped wit...
Piezoresistive mechanical sensors play a very important role in modern industries. MEMS pressure sen...
The slow etching rate of conventional micro-machining processes is hindering the use of bulk silicon...
In different industrial applications, such as injection molding and/or hot rolling, it is necessary ...
AbstractIn this work, we report the fabrication and characterization of a SiC/SiO2/Si piezoresistive...
The slow etching rate of conventional micro-machining processes is hindering the use of bulk silicon...
This work focusses on the design and fabrication of surface micromachined pressure sensors, designed...
4H-silicon carbide based sensors are promising candidates for replacing prevalent silicon-based coun...
A 4H-SiC pressure sensor with piezoresistive transducers, for harsh environment applications, e.g., ...
Pressure measurement under harsh environments, especially at high temperatures, is of great interest...
We have performed the initial characterization of single crystal 4H silicon carbide (4H-SiC) pressur...
This paper reports on the piezoresistive effect in p-type 3C-SiC thin film mechanical sensing at cry...
Piezoresistive mechanical sensors play a very important role in modern industries. MEMS pressure sen...
Abstract-The design of a capacitive-sensing pressure sensor for extreme environment is proposed in t...