First-Principles Investigation on Oxide Trapping

We conduct a thorough investigation of the tunneling dynamics of oxide traps in a-SiO2, in particular of the E′δ center, the E γ center, their hydrogenated counterparts, and the H atom. Based on these findings their behavior in the context of tunneling can be deduced. It is found that an E′γ center can exchange electrons with the Si bulk. The E′δ center shows two distinct behaviors induced by a spread in its tunneling levels. The H atom is not affected by the presence of an interface, whereas a H bridge may occur in every charge state.