We have studied the reliability of intrinsic SiN MIM capacitors designed for 48 V and 125 0C operation and manufactured in a GaN process flow. It is shown that very small area capacitors (10um x 10um) with a dielectric thickness of 400nm exhibit lifetimes as long as 1.48E10 hours under such conditions
In this paper, we propose for the first time an attractive Si 3N4/laminated Al2O3-HfO2 (LAHO) stack ...
The evolution of wide-bandgap semiconductor transistor technology is placed in historical context wi...
In this paper, we propose for the first time an attractive Si3N4/laminated Al2O3-HfO2 (LAHO) stack m...
Abstract-A single GaAs MMIC fabrication flow produces three different types of silicon nitride capac...
Silicon nitride (SiN) metal-insulator-metal capacitors (MIMCAPs) are components of most GaAs and GaN...
We present ramped voltage data from a new nitride used in our fabrication process. Using the same fa...
Metal-insulator-metal capacitor (MIMC) reliability and electrical properties are defined by the TDDB...
Capacitor properties were studied using a special test mask. We derived improved measurement and tes...
n this work, a novel, high quality, high-density, deposited at room temperature ultra thin 5 nm Si3N...
The lifetime of MIM capacitor is studied focused on fabrication process conditions. Comparing the li...
In this paper we report room temperature constant voltage life-time measurements of silicon nitride ...
This paper reports reliability evaluation of BME ceramic capacitors for possible high reliability sp...
The electrical reliability of integrated capacitors to be used for AC-coupled microstrip detectors h...
The evolution of wide-bandgap semiconductor transistor technology is placed in historical context wi...
The evolution of wide-bandgap semiconductor transistor technology is placed in historical context wi...
In this paper, we propose for the first time an attractive Si 3N4/laminated Al2O3-HfO2 (LAHO) stack ...
The evolution of wide-bandgap semiconductor transistor technology is placed in historical context wi...
In this paper, we propose for the first time an attractive Si3N4/laminated Al2O3-HfO2 (LAHO) stack m...
Abstract-A single GaAs MMIC fabrication flow produces three different types of silicon nitride capac...
Silicon nitride (SiN) metal-insulator-metal capacitors (MIMCAPs) are components of most GaAs and GaN...
We present ramped voltage data from a new nitride used in our fabrication process. Using the same fa...
Metal-insulator-metal capacitor (MIMC) reliability and electrical properties are defined by the TDDB...
Capacitor properties were studied using a special test mask. We derived improved measurement and tes...
n this work, a novel, high quality, high-density, deposited at room temperature ultra thin 5 nm Si3N...
The lifetime of MIM capacitor is studied focused on fabrication process conditions. Comparing the li...
In this paper we report room temperature constant voltage life-time measurements of silicon nitride ...
This paper reports reliability evaluation of BME ceramic capacitors for possible high reliability sp...
The electrical reliability of integrated capacitors to be used for AC-coupled microstrip detectors h...
The evolution of wide-bandgap semiconductor transistor technology is placed in historical context wi...
The evolution of wide-bandgap semiconductor transistor technology is placed in historical context wi...
In this paper, we propose for the first time an attractive Si 3N4/laminated Al2O3-HfO2 (LAHO) stack ...
The evolution of wide-bandgap semiconductor transistor technology is placed in historical context wi...
In this paper, we propose for the first time an attractive Si3N4/laminated Al2O3-HfO2 (LAHO) stack m...