NBTI (Negative Bias Temperature Instability) has emerged as the dominant PMOS device failure mechanism for sub-100nm VLSI designs. There is little research to quantify its impact on skew of clock trees. This paper demonstrates a mathematical framework to compute the impact of NBTI on gating-enabled clock tree considering their workload depen-dent temperature variation. Circuit design techniques are proposed to deal with NBTI induced clock skew by achieving balance in NBTI degradation of clock devices. Our technique achieves up-to 70 % reduction in clock skew degradation with miniscule (<0.1%) power and area penalty. 1
For sub-65nm technology nodes, Negative Bias Temperature Instability (NBTI) has become a primary lim...
As the CMOS technology scales down towards nanoscale dimensions, there are increasing transistor rel...
In this paper we analyze the effect of the Bias Temperature Instability (BTI) aging phenomenon on th...
NBTI (Negative Bias Temperature Instability) has emerged as the dominant PMOS device failure mechani...
Negative bias temperature instability (NBTI) has emerged as a major concern not only to the function...
(N/PBTI) have become one of the most important reliability issues in modern semiconductor technology...
Negative-bias-temperature-instability (NBTI) has become the primary limiting factor of circuit lifet...
Negative bias temperature instability (NBTI) has become the dominant reliability concern for nanosca...
to mitigate critical reliability mechanisms (such as negative bias temperature instability (NBTI), h...
Abstract: Negative Bias Temperature Instability (NBTI) is identified as one of the most critical rel...
An identical phenomenon, positive bias temperature instability, happens when an nMOS transistor is u...
The existence of non-uniform thermal gradients on the substrate in high performance IC's can signifi...
In this sliide presentation the statistical impact of PMOS Negative Bias Temperature Instability (NB...
Abstract – This paper evaluates the severity of negative bias temperature instability (NBTI) degrada...
© 2015 Elsevier B.V. Negative Bias Temperature Instability (NBTI) is one of the major time-dependent...
For sub-65nm technology nodes, Negative Bias Temperature Instability (NBTI) has become a primary lim...
As the CMOS technology scales down towards nanoscale dimensions, there are increasing transistor rel...
In this paper we analyze the effect of the Bias Temperature Instability (BTI) aging phenomenon on th...
NBTI (Negative Bias Temperature Instability) has emerged as the dominant PMOS device failure mechani...
Negative bias temperature instability (NBTI) has emerged as a major concern not only to the function...
(N/PBTI) have become one of the most important reliability issues in modern semiconductor technology...
Negative-bias-temperature-instability (NBTI) has become the primary limiting factor of circuit lifet...
Negative bias temperature instability (NBTI) has become the dominant reliability concern for nanosca...
to mitigate critical reliability mechanisms (such as negative bias temperature instability (NBTI), h...
Abstract: Negative Bias Temperature Instability (NBTI) is identified as one of the most critical rel...
An identical phenomenon, positive bias temperature instability, happens when an nMOS transistor is u...
The existence of non-uniform thermal gradients on the substrate in high performance IC's can signifi...
In this sliide presentation the statistical impact of PMOS Negative Bias Temperature Instability (NB...
Abstract – This paper evaluates the severity of negative bias temperature instability (NBTI) degrada...
© 2015 Elsevier B.V. Negative Bias Temperature Instability (NBTI) is one of the major time-dependent...
For sub-65nm technology nodes, Negative Bias Temperature Instability (NBTI) has become a primary lim...
As the CMOS technology scales down towards nanoscale dimensions, there are increasing transistor rel...
In this paper we analyze the effect of the Bias Temperature Instability (BTI) aging phenomenon on th...