DISTRIBUTION OF Al, B AND P IN MULTI-CRYSTALLINE Si INGOTS

ABSTRACT: Mc-silicon ingots were doped with aluminium, boron (p-type) and phosphorous (n-type). The aim of the work was to study the distribution of these dopants along the ingots. A recently developed mathematical model based on the Scheil`s equation was used for evaluating the distribution of aluminium, boron and phosphorous and the values were compared with the experimental results. The mathematical model showed excellent agreement with the experimental results for all ingots