A full journal publication of this work will be published in the Journal of Computational Electronics. Modeling of the Electrostatic (Plasmon) Resonances in Metallic and Semiconductor Nanoparticles

It is known that small dielectric objects can exhibit resonant behavior at certain frequencies for which the object permittivity is negative and the free-space wavelength is large in comparison with object dimensions [1]. This phenomenon usually occurs at nanoscale and at optical frequencies where the above two conditions can be simultaneously satisfied. These resonances are electrostatic in nature, and they result in powerful localized sources of light, which may find applications in nano-lithography, nanophotonics, surface-enhanced Raman scattering, biosensors, and optical data storage. These resonances in semiconductor nanoparticles are of special interested because they can be controlled through optical manipulation of carrier densities. This optical controllability can be utilized for the development of nanoscale light switches and all-optical transistors. Currently these resonances in nanoparticles are found experimentally (or numerically) by probing dielectric objects of complex shapes with radiation of various frequencies, i.e. by using a “trial-and-error ” method. There has not existed any technique for direct calculation of the negative values of dielectric permittivities, and the corresponding frequencies of electromagnetic radiation at which these resonances occur. In the paper, we present a new technique for direc