Add to ORKGThe introduction of low-k and ultra low-k dielectric con-stant materials has had a significant adverse effect on the mechanical integrity of semiconductor devices. As th
been guided by CMOS scaling theory [1] and predications made by Semiconductor Industry (SIA) in the ...
Ultra-low-k time-dependent dielectric breakdown (TDDB) is one of the most important reliability iss...
Porous low-k materials are required as interlayer dielectrics in future technology nodes in order to...
Due to the radical compromise in thermal and/or mechanical properties that the migration from silico...
The project will focus on the integration of the ultra low k materials into advanced silicon process...
Low-dielectric (k) films are one of the performance drivers for continued scaling of integrated circ...
textAdvanced integrated circuit (IC) technology has implemented new materials for necessary and time...
The degradation and breakdown mechanisms of a SiOCH low-k material with k¼2.3 (25% porosity) and thi...
Advanced interconnect technologies require the continuous development of reliable low-k dielectric m...
The miniaturization of integrated circuits (ICs) has led to the use of copper and low-k dielectrics ...
Nowadays the implementation of copper and low k material into IC fabrication is a serious issue for ...
In the semiconductor industry, the number of transistors per unit area has steadily increased over t...
Electrical reliability issues of two organic aromatic low-K materials (K = 2.6- 2.8) were investigat...
Since recent years, micro-electronic industry changed the basic materials from Al/SiO2 to Cu/low-k i...
Cu and low-dielectric-constant (k) metallization schemes are critical for improved performance of in...
been guided by CMOS scaling theory [1] and predications made by Semiconductor Industry (SIA) in the ...
Ultra-low-k time-dependent dielectric breakdown (TDDB) is one of the most important reliability iss...
Porous low-k materials are required as interlayer dielectrics in future technology nodes in order to...
Due to the radical compromise in thermal and/or mechanical properties that the migration from silico...
The project will focus on the integration of the ultra low k materials into advanced silicon process...
Low-dielectric (k) films are one of the performance drivers for continued scaling of integrated circ...
textAdvanced integrated circuit (IC) technology has implemented new materials for necessary and time...
The degradation and breakdown mechanisms of a SiOCH low-k material with k¼2.3 (25% porosity) and thi...
Advanced interconnect technologies require the continuous development of reliable low-k dielectric m...
The miniaturization of integrated circuits (ICs) has led to the use of copper and low-k dielectrics ...
Nowadays the implementation of copper and low k material into IC fabrication is a serious issue for ...
In the semiconductor industry, the number of transistors per unit area has steadily increased over t...
Electrical reliability issues of two organic aromatic low-K materials (K = 2.6- 2.8) were investigat...
Since recent years, micro-electronic industry changed the basic materials from Al/SiO2 to Cu/low-k i...
Cu and low-dielectric-constant (k) metallization schemes are critical for improved performance of in...
been guided by CMOS scaling theory [1] and predications made by Semiconductor Industry (SIA) in the ...
Ultra-low-k time-dependent dielectric breakdown (TDDB) is one of the most important reliability iss...
Porous low-k materials are required as interlayer dielectrics in future technology nodes in order to...