Abstracts – In this paper, we propose a new method that can measure the thickness of thin films regardless of the kinds of samples using AFM (Atomic Force Microscopy). The characteristics of AFM lead to the ability to measure the thickness of thin films regardless of the kinds and the conductivity of the samples. As an example, SiO2 thickness grown on Si that becomes more significant as the thickness becomes small was determined. We compared the thickness value determined using this method with TEM (Transmission Electron Microscopy) data. We obtained the reasonable thickness data between 20 and 40Åcomparing with TEM data. I
High Resolution Transmission Electron Microscopy (HR-TEM) has been used as the ultimate method of th...
As charge tunnelling through thin and ultra-thin silicon dioxide layers is regarded as the driving f...
A promising method has been developed to determine micromechanical properties of thin film materials...
Conductive atomic force microscopy was used to determine the electrical oxide thickness for five dif...
The thicknesses of thin oxide films grown on silicon in oxygen were measured by transmission electro...
High-accuracy film thickness measurements in the range below 100 nm can be made by various complex m...
Journal ArticleFabrication techniques of metal-oxide-semiconductor ~(MOS) transistors have been imp...
The determination of the thickness has a fundamental importance in all the fields in which the imple...
Abstract: Measuring the changing thickness of a thin film, without a reference, using an atomic forc...
Quantification in surface analysis using Auger electron spectroscopy and X-ray photoelectron spectro...
Abstract: High Resolution Transmission Electron Microscopy (HR-TEM) has been used as the ultimate me...
An ultra- thin Ti film with a thickness of less than 30 nm was deposited on the surface of a silicon...
<p>The surface uniformity and roughness were investigated by AFM. The 2D AFM images of ZnO thin film...
The need for a rapid, non-destructive failure analysis of complex integrated circuits has led to the...
High Resolution Transmission Electron Microscopy (HR-TEM) has been used as the ultimate method of t...
High Resolution Transmission Electron Microscopy (HR-TEM) has been used as the ultimate method of th...
As charge tunnelling through thin and ultra-thin silicon dioxide layers is regarded as the driving f...
A promising method has been developed to determine micromechanical properties of thin film materials...
Conductive atomic force microscopy was used to determine the electrical oxide thickness for five dif...
The thicknesses of thin oxide films grown on silicon in oxygen were measured by transmission electro...
High-accuracy film thickness measurements in the range below 100 nm can be made by various complex m...
Journal ArticleFabrication techniques of metal-oxide-semiconductor ~(MOS) transistors have been imp...
The determination of the thickness has a fundamental importance in all the fields in which the imple...
Abstract: Measuring the changing thickness of a thin film, without a reference, using an atomic forc...
Quantification in surface analysis using Auger electron spectroscopy and X-ray photoelectron spectro...
Abstract: High Resolution Transmission Electron Microscopy (HR-TEM) has been used as the ultimate me...
An ultra- thin Ti film with a thickness of less than 30 nm was deposited on the surface of a silicon...
<p>The surface uniformity and roughness were investigated by AFM. The 2D AFM images of ZnO thin film...
The need for a rapid, non-destructive failure analysis of complex integrated circuits has led to the...
High Resolution Transmission Electron Microscopy (HR-TEM) has been used as the ultimate method of t...
High Resolution Transmission Electron Microscopy (HR-TEM) has been used as the ultimate method of th...
As charge tunnelling through thin and ultra-thin silicon dioxide layers is regarded as the driving f...
A promising method has been developed to determine micromechanical properties of thin film materials...