Si Nanocrystal Based Memory Structures by Ultra Low Energy Implantation for Low Voltage/Low Power Applications P.Dimitrakis, E.Kapetanakis,

Metal-Oxide-Semiconductor structures exhibiting significant charge storage due to the presence of Si nanocrystals into the amorphous oxide matrix have been fabricated by 1keV Si ion implantation into 10nm SiO2 gate oxide layer. The effect of the implanted dose and annealing temperature on the memory window is reported. Large shifts of flat-band voltage are achieved at very low programming electric fields (4V at 2MV/cm). 1