Frontiers of III-V Compo

ABSTRACT — The paper presents an overview on the European status of electronic devices for micro- and mm-wave applications based on III/V compound semiconduc-tors. Both low noise and power devices for applications from a few GHz up to several hundred GHz are considered in terms of specific material and processing technologies and of typical device results. This includes a survey on the actual status of GaAs based HEMT and HBT devices, metamorphic HEMT devices. Furthermore recent results on high speed InP based HEMTs and HBTs are summa-rized. Regarding power applications the potentials of ma-ture GaAs HBT technologies, power HEMTs and novel GaN technologies are discussed and compared to each other. I