Enhanced Band-to-Band Tunneling-Induced-Hot-Electron Injection in P-Channel Flash by SiGe Channel and HfO2 Tunnel Dielectric

SiGe employment is, for the first time, proposed to enhance band-to-band-tunneling-induced hot electron injection (BBHE) in a p-channel flash by the analysis made with two dimensional device simulator MEDICI. Simulation results show that more than 100 times enhancement in the programming speed can be achieved in a proposed p-channel flash with 40 % Ge in the surface SiGe channel. In addition, a Si-cap layer and HfO2 tunnel dielectric are also incorporated to improve the interface quality. Up to 1000 times enhancement in BBHE injection programming speed is achieved in the case of a p-channel flash memory with surface SiGe layer and HfO2 tunnel dielectric.