Add to ORKGThe main purpose of this paper is to present the design of a class E power amplifier for Bluetooth Class 1 application. The power amplifier has to provide 20 dBm output power and as high as possible power efficiency at 1.5V power supply voltage, for 0.35µm CMOS Austria Microsystems (AMS) technology
grantor: University of TorontoThis thesis presents the design and implementation of a Clas...
In this paper, based on the specification assigned, I have designed a low voltage Class-E Power Ampl...
10.1109/TCSI.2012.2188951IEEE Transactions on Circuits and Systems I: Regular Papers59102210-222
In recent RF front-end IC designs, CMOS technology has gained much more popularity for its low cost ...
A two-stage power amplifier operated at 2.4 GHz is designed and fabricated in a standard 0.35-mum CM...
A two-stage power amplifier operated at 2.4GHz has been designed and fabricated in a standard 0.35mu...
A fully integrated differential class-AB power amplifier has been designed in a 0.25 um CMOS technol...
Abstract — This paper presents the design of two low-voltage differential class-E power amplifiers ...
With recent advance in CMOS processes, many essential building blocks for wireless transceivers, suc...
Modern fully integrated transceivers architectures, require circuits with low area, low cost, low p...
This thesis researches the design of transceiver front-end RF amplifiers for Bluetooth applications ...
In this paper, we report an RF power amplifier design in digital CMOS technology for the Class 1 pow...
grantor: University of TorontoThe thesis deals with the design of a Class E power amplifie...
Abstract In this paper, we report an RF power amplifier design in digital CMOS technology for the Cl...
Abstract—This paper describes the design of a differential class-E PA for Bluetooth applications in ...
grantor: University of TorontoThis thesis presents the design and implementation of a Clas...
In this paper, based on the specification assigned, I have designed a low voltage Class-E Power Ampl...
10.1109/TCSI.2012.2188951IEEE Transactions on Circuits and Systems I: Regular Papers59102210-222
In recent RF front-end IC designs, CMOS technology has gained much more popularity for its low cost ...
A two-stage power amplifier operated at 2.4 GHz is designed and fabricated in a standard 0.35-mum CM...
A two-stage power amplifier operated at 2.4GHz has been designed and fabricated in a standard 0.35mu...
A fully integrated differential class-AB power amplifier has been designed in a 0.25 um CMOS technol...
Abstract — This paper presents the design of two low-voltage differential class-E power amplifiers ...
With recent advance in CMOS processes, many essential building blocks for wireless transceivers, suc...
Modern fully integrated transceivers architectures, require circuits with low area, low cost, low p...
This thesis researches the design of transceiver front-end RF amplifiers for Bluetooth applications ...
In this paper, we report an RF power amplifier design in digital CMOS technology for the Class 1 pow...
grantor: University of TorontoThe thesis deals with the design of a Class E power amplifie...
Abstract In this paper, we report an RF power amplifier design in digital CMOS technology for the Cl...
Abstract—This paper describes the design of a differential class-E PA for Bluetooth applications in ...
grantor: University of TorontoThis thesis presents the design and implementation of a Clas...
In this paper, based on the specification assigned, I have designed a low voltage Class-E Power Ampl...
10.1109/TCSI.2012.2188951IEEE Transactions on Circuits and Systems I: Regular Papers59102210-222