New Hot-Carrier Degradation Mechanism for MOSFET Devices Using Two-Type Interface-State Model

We have studied the characteristics of MOSFET degradation induced by hot-carriers. When the characteristics of drain current degradation (A/j) are ap-plied to the stress time(t) dependence AIj oc tn, the exponent n is clearly different under different bias conditions. We present a two-type interface-state model composed of deep-energy interface states and shallow-energy interface states which have a different n exponent in order to explain the characteristics of drain current degradation. 1