Stable Semiconductor Magnetic Field Sensors Under Dozes of High Radiation.

The influence of irradiation by fast neutrons on characteristics of InSb semiconductor mi-crocrystals that are used for creation of Hall radiation resistant magnetic field microsensors has been investigated. It is reported about an experiment on measuring radiation resistant microsen-sors directly under the irradiation at the IBR-2 reactor channel and about their application in mag-netic measurement systems. It is shown that radiation resistance of microsensors is not worse than 0.04 % in case of their irradiation by fast neutrons up to a fluence of 1×1015 n×cm-2. Introduction. Characteristics of ordinary semiconductor materials and devices on their base change greatly under the influence of radiation. For example, silicon transistors are failing at a fast neu-tron fluence of 1015 n×cm-2, and GaAs light-emitting diodes and photo diodes at a fast neutron flu-ence of 1014 n×cm-2. Sensitivity to magnetic field is one of the basic characteristics, and in the wel