TWO-DIMENSIONAL NUMERICAL MODELS FOR THE HIGH ELECTRON MOBILITY TRANSISTOR

A two-dimensional drif t-diffusion model for the high e l e c t r o n mobi l i ty t r ans i s to r (HEMT) i s described. Special a t t en t i on i s paid to the modeling of the AlGaAs/GaAs h e t e r o-junct ion. Also, an energy transport model for the HEMT i s proposed. The in ternal d is t r ibut ions of electron density, voltage and current density are discussed. The influence of hot e l ec t ron effects in HEMT's i s demonstrated. The resu l t s obtained using these models are found to agree with those obtained from e x p e r i-mental devices. In the l a s t few years, more and more a t tent ion has been paid to the high electron mobility t r ans i s to r, both from e x p e r i-mental and theoret ical point of view. The f i r s t HEMT models p resen ted were one-dimensional analytical models, based o