Abstract: In this paper we present an investigation of the static performance over the 300K-80K temperature range of pseudo-heterojunction bipolar transistors using an advanced single-polysilicon CMOS compatible self-aligned structure and epitaxial growth for the base and the low doped emitter spacer. These devices exhibit ideal collector currents and non-ideal base currents. By analysing the base leakage current, we have been able to identify the main critical fabrication steps. The bandgap narrowing in the base has been deduced from the temperature dependence of the collector current and the effect of a parasitic boron spike in the base doping profile on the low temperature performance of the transistor has been studied.
This paper investigates the effect of using an extrinsic implant on the behaviour of SiGe HBTs at lo...
Within the framework of a double polysilicon self-aligned bipolar technology shallow base widths WB ...
An Investigation of the Effects of Emitter Pre-Deposition Temperature in Double-Diffued Polysilicon ...
In this paper we present an investigation of the static performance over the 300K-80K temperature ra...
In this paper we present an investigation of the static performance over the 300K-80K temperature ra...
This thesis investigates the low temperature characterization of Si bipolar junction transistors and...
The use of low thermal budget processing is an important constraint in the fabrication of Si1-xGex d...
Existing experiments and theories have demonstrated that the polysilicon emitter contact bipolar tra...
An important means of improving the high-speed performance of silicon bipolar circuits, is to scale ...
[[abstract]]A two-dimensional model with grain boundary traps for polycrystalline silicon is used in...
The aim of this paper is to present the results of several accelerated tests performed on self-align...
This thesis investigates the use of in-situ phosphorus doped polysilicon emitter contacts in deep su...
In a self-aligned double polysilicon bipolar junction transistor (BJT) process, the emitter window i...
In a study performed over the temperature range of 400 to 77 K, Si bipolar transistors were found to...
This paper investigates the effects of an in-situ hydrogen bake and an ex-situ HF etch prior to poly...
This paper investigates the effect of using an extrinsic implant on the behaviour of SiGe HBTs at lo...
Within the framework of a double polysilicon self-aligned bipolar technology shallow base widths WB ...
An Investigation of the Effects of Emitter Pre-Deposition Temperature in Double-Diffued Polysilicon ...
In this paper we present an investigation of the static performance over the 300K-80K temperature ra...
In this paper we present an investigation of the static performance over the 300K-80K temperature ra...
This thesis investigates the low temperature characterization of Si bipolar junction transistors and...
The use of low thermal budget processing is an important constraint in the fabrication of Si1-xGex d...
Existing experiments and theories have demonstrated that the polysilicon emitter contact bipolar tra...
An important means of improving the high-speed performance of silicon bipolar circuits, is to scale ...
[[abstract]]A two-dimensional model with grain boundary traps for polycrystalline silicon is used in...
The aim of this paper is to present the results of several accelerated tests performed on self-align...
This thesis investigates the use of in-situ phosphorus doped polysilicon emitter contacts in deep su...
In a self-aligned double polysilicon bipolar junction transistor (BJT) process, the emitter window i...
In a study performed over the temperature range of 400 to 77 K, Si bipolar transistors were found to...
This paper investigates the effects of an in-situ hydrogen bake and an ex-situ HF etch prior to poly...
This paper investigates the effect of using an extrinsic implant on the behaviour of SiGe HBTs at lo...
Within the framework of a double polysilicon self-aligned bipolar technology shallow base widths WB ...
An Investigation of the Effects of Emitter Pre-Deposition Temperature in Double-Diffued Polysilicon ...