In very deep-submicron VLSI, certain manufacturing steps – notably optical exposure, resist development and etch, chemical vapor deposi-tion and chemical-mechanical polishing (CMP) – have varying effects on device and interconnect features depending on local characteristics of the layout. To make these effects uniform and predictable, the layout itself must be made uniform with respect to certain density parame-ters. Traditionally, only foundries have performed the post-processing needed to achieve this uniformity, via insertion (“filling”) or partial deletion (“slotting”) of features in the layout. Today, however, physical design and verification tools cannot remain oblivious to such foundry post-processing. Without an accurate estimate of...
In this thesis, three major issues related to process variation in integrated circuits in the subwav...
To improve manufacturability and yield, a number of fill structures are used in semiconductor manufa...
Each reduction of the technology node has, along with improvements in IC fabricationtechnology, been...
In very deep-submicron VLSI, certain manufacturing steps – notably optical exposure, resist developm...
In very deep-submicron VLSI, certain manufacturing steps -- notably optical exposure, resist develop...
In very deep-submicron VLSI, manufacturing steps involving chemical-mechanical polishing (CMP) have ...
Chemical-mechanical planarization (CMP) and other manufactur-ing steps in very deep-submicron VLSI h...
Chemical-mechanical planarization (CMP) and other manufactur-ing steps in very deep-submicron VLSI h...
Control of variability and performance in the back end of the VLSI manufacturing line has become ext...
other manufacturing steps in very deep submicron VLSI have varying effects o n device and interconne...
textChemical-mechanical polishing (CMP) is an enabling technique used in deep- submicron VLSI manuf...
Control of variability in the back end of the line, and hence in interconnect performance as well, h...
Control of variability in the back end of the line, and hence in interconnect performance as well, h...
CMOS scaling has outpaced manufacturing technology advancements, and consequently process variabilit...
Chemical-mechanical planarization (CMP) and other manufacturing steps in very deep submicron VLSI ha...
In this thesis, three major issues related to process variation in integrated circuits in the subwav...
To improve manufacturability and yield, a number of fill structures are used in semiconductor manufa...
Each reduction of the technology node has, along with improvements in IC fabricationtechnology, been...
In very deep-submicron VLSI, certain manufacturing steps – notably optical exposure, resist developm...
In very deep-submicron VLSI, certain manufacturing steps -- notably optical exposure, resist develop...
In very deep-submicron VLSI, manufacturing steps involving chemical-mechanical polishing (CMP) have ...
Chemical-mechanical planarization (CMP) and other manufactur-ing steps in very deep-submicron VLSI h...
Chemical-mechanical planarization (CMP) and other manufactur-ing steps in very deep-submicron VLSI h...
Control of variability and performance in the back end of the VLSI manufacturing line has become ext...
other manufacturing steps in very deep submicron VLSI have varying effects o n device and interconne...
textChemical-mechanical polishing (CMP) is an enabling technique used in deep- submicron VLSI manuf...
Control of variability in the back end of the line, and hence in interconnect performance as well, h...
Control of variability in the back end of the line, and hence in interconnect performance as well, h...
CMOS scaling has outpaced manufacturing technology advancements, and consequently process variabilit...
Chemical-mechanical planarization (CMP) and other manufacturing steps in very deep submicron VLSI ha...
In this thesis, three major issues related to process variation in integrated circuits in the subwav...
To improve manufacturability and yield, a number of fill structures are used in semiconductor manufa...
Each reduction of the technology node has, along with improvements in IC fabricationtechnology, been...