Add to ORKGAbstract — Research and development of InP-based transistors and integrated circuits (ICs) are driven by applications in millimeter-wave wireless and broadband optical fiber communications systems. This paper describes our research activities on InP HEMT and HBT IC technologies for optical communications systems and discusses the future prospects and technical issues of ICs for 100 Gbit/s and beyond. I
A manufacturable, reliable, and high performance InP Heterostructure Bipolar Transistors device tech...
As tele- and data-communications develop rapidly, optic-fiber networks are widely implemented and th...
Compared to SiGe, InP HBTs offer superior electron transport properties but inferior scaling and par...
Research and development of InP--based transistors and integrated circuits (ICs)are driven by applic...
It is now clear that 112-Gb/s data rate is the next step in the network evolution (100-Gb/s Ethernet...
Key components and architecture options are being actively investigated to realize next generation t...
In this paper, we report a manufacturable InP DHBT technology, suitable for medium scale mixed-signa...
The Fraunhofer IAF developed a variety of advanced mixed-signal monolithic integrated circuits (ICs)...
For communication and sensor system applications, Monolithic Microwave Integrated Circuits (MMICs) f...
In this paper, we report the achieved performance of devices and integrated circuits (ICs) using a m...
Using advanced III/V process technologies, a variety of state-of-the-art millimeter-wave monolithic ...
In this paper, we report a manufacturable InP DHBT technology, suitable for medium scale mixed-signa...
electron transport but inferior scaling and parasitic reduction. Figures of merit for mixed-signal I...
Abstract—Compared to SiGe, InP HBTs offer superior electron transport properties but inferior scalin...
During the last years, the Fraunhofer IAF developed a variety of state-of-the-art millimeter-wave mo...
A manufacturable, reliable, and high performance InP Heterostructure Bipolar Transistors device tech...
As tele- and data-communications develop rapidly, optic-fiber networks are widely implemented and th...
Compared to SiGe, InP HBTs offer superior electron transport properties but inferior scaling and par...
Research and development of InP--based transistors and integrated circuits (ICs)are driven by applic...
It is now clear that 112-Gb/s data rate is the next step in the network evolution (100-Gb/s Ethernet...
Key components and architecture options are being actively investigated to realize next generation t...
In this paper, we report a manufacturable InP DHBT technology, suitable for medium scale mixed-signa...
The Fraunhofer IAF developed a variety of advanced mixed-signal monolithic integrated circuits (ICs)...
For communication and sensor system applications, Monolithic Microwave Integrated Circuits (MMICs) f...
In this paper, we report the achieved performance of devices and integrated circuits (ICs) using a m...
Using advanced III/V process technologies, a variety of state-of-the-art millimeter-wave monolithic ...
In this paper, we report a manufacturable InP DHBT technology, suitable for medium scale mixed-signa...
electron transport but inferior scaling and parasitic reduction. Figures of merit for mixed-signal I...
Abstract—Compared to SiGe, InP HBTs offer superior electron transport properties but inferior scalin...
During the last years, the Fraunhofer IAF developed a variety of state-of-the-art millimeter-wave mo...
A manufacturable, reliable, and high performance InP Heterostructure Bipolar Transistors device tech...
As tele- and data-communications develop rapidly, optic-fiber networks are widely implemented and th...
Compared to SiGe, InP HBTs offer superior electron transport properties but inferior scaling and par...