Add to ORKGfT 90 GHz and fmax 188 GHz have been reported [1,2]. In order to make this promising technology SiGe MODFET technology includes physical modelling and the extraction of small-signal equivalent circuit elements [3,4]. While physical modelling can provide valuable insight into the dependence of device RF properties on design parameters such as gate geome-try and operating conditions (temperature etc.), thi
A comprehensive analysis methodology allowing investigation of the RF performance of Si and strained...
The objective of proposed research is to investigate the potential of strained silicon and silicon-...
In this work the analogue performance of 50 nm gate length FinFETs is investigated under static and ...
A new MODFET circuit model required for millimeter-wave MMIC design has been developed, since it was...
N-type large gate-width modulation-doped field-effect transistors (MODFETs) are fabricated on Si/SiG...
77 GHz LNAs and TWAs operating from DC to 80 GHz were fabricated successfully (1),(2) using a highly...
A fast, quasi-two-dimensional physical MODFET model, capable of accurately simulating single-, multi...
A general technique for predicting the MODFET large signal performance has been developed. The techn...
Modulation doped FETs (MODFETs) provide low-noise performance in many medium- and high-power microwa...
Strained silicon channel FETs grown on virtual SiGe substrates show clear potential for RF applicati...
Based on careful calibration in respect of 70 nm n-type strained Si channel S/SiGe modulation doped ...
The view, opinions and/or findings contained in this report are those of;he authgr($).and sh uld no,...
The small-signal equivalent circuit modeling of microwave field-effect transistors (FETs) is an ever...
The HF performances of n-type strained Si channel Modulation Doped Field Effect Transistors (MODFETs...
In this work the analogue performance of 50 nm gate length FinFETs is investigated under static and ...
A comprehensive analysis methodology allowing investigation of the RF performance of Si and strained...
The objective of proposed research is to investigate the potential of strained silicon and silicon-...
In this work the analogue performance of 50 nm gate length FinFETs is investigated under static and ...
A new MODFET circuit model required for millimeter-wave MMIC design has been developed, since it was...
N-type large gate-width modulation-doped field-effect transistors (MODFETs) are fabricated on Si/SiG...
77 GHz LNAs and TWAs operating from DC to 80 GHz were fabricated successfully (1),(2) using a highly...
A fast, quasi-two-dimensional physical MODFET model, capable of accurately simulating single-, multi...
A general technique for predicting the MODFET large signal performance has been developed. The techn...
Modulation doped FETs (MODFETs) provide low-noise performance in many medium- and high-power microwa...
Strained silicon channel FETs grown on virtual SiGe substrates show clear potential for RF applicati...
Based on careful calibration in respect of 70 nm n-type strained Si channel S/SiGe modulation doped ...
The view, opinions and/or findings contained in this report are those of;he authgr($).and sh uld no,...
The small-signal equivalent circuit modeling of microwave field-effect transistors (FETs) is an ever...
The HF performances of n-type strained Si channel Modulation Doped Field Effect Transistors (MODFETs...
In this work the analogue performance of 50 nm gate length FinFETs is investigated under static and ...
A comprehensive analysis methodology allowing investigation of the RF performance of Si and strained...
The objective of proposed research is to investigate the potential of strained silicon and silicon-...
In this work the analogue performance of 50 nm gate length FinFETs is investigated under static and ...