Add to ORKGSilicon carbide layers have been produced by Chemical Vapor Deposition at low pressures (LPCVD) on graphite substrates from tetramethylsilane and hydrogen. The effects of change in partial pressure of hydrogen on the kinetics, morphology and suucture of the layers have been examined. A model of the layer growth is developed
International audienceThe paper deals with the properties of silicon films obtained by low-pressure ...
The approaches to conformal and superconformal deposition developed by Abelson and Girolami for a lo...
The depositions of amorphous and cubic-crystal SiC from a new chemical vapor deposition source, diet...
Silicon carbide layers have been produced by Chemical Vapor Deposition at low pressures (LPCVD) on g...
The morphological features of silicon carbide coatings, deposited on graphite from SiCl4, C3H8 and H...
In this work, 4H-SiC epilayers are performed on 4° off-axis substrates under low pressure condition ...
Chemical vapor deposition (CVD) of SiC from methyltrichlorosilane (NITS) was studied at two differen...
Chemical vapor deposition (CVD) of SiC from methyltrichlorosilane (NITS) was studied at two differen...
Silicon carbide (SiC) films were synthesized by the low pressure chemical vapor deposition (LPCVD) m...
Hydrogenated amorphous silicon carbon (a-SiC:H) films were deposited using pure SiH(4) and C(2)H(2) ...
Abstract: Silicon Carbide has been grown by rapid thermal carbonization of (1 00) and (1 1 1) Si sur...
Nanocrystalline silicon carbide (nc-SiC) films are prepared by low-frequency inductively coupled pla...
International audienceThe chemical vapor deposition (CVD) of silicon carbide from vinyltrichlorosila...
Heteroepitaxial growth of silicon carbide (SiC) on graphene/SiO2/Si substrates was carried out using...
International audienceIn the CH3SiCl3-H2 CVD system, from which SiC-based films are prepared, the su...
International audienceThe paper deals with the properties of silicon films obtained by low-pressure ...
The approaches to conformal and superconformal deposition developed by Abelson and Girolami for a lo...
The depositions of amorphous and cubic-crystal SiC from a new chemical vapor deposition source, diet...
Silicon carbide layers have been produced by Chemical Vapor Deposition at low pressures (LPCVD) on g...
The morphological features of silicon carbide coatings, deposited on graphite from SiCl4, C3H8 and H...
In this work, 4H-SiC epilayers are performed on 4° off-axis substrates under low pressure condition ...
Chemical vapor deposition (CVD) of SiC from methyltrichlorosilane (NITS) was studied at two differen...
Chemical vapor deposition (CVD) of SiC from methyltrichlorosilane (NITS) was studied at two differen...
Silicon carbide (SiC) films were synthesized by the low pressure chemical vapor deposition (LPCVD) m...
Hydrogenated amorphous silicon carbon (a-SiC:H) films were deposited using pure SiH(4) and C(2)H(2) ...
Abstract: Silicon Carbide has been grown by rapid thermal carbonization of (1 00) and (1 1 1) Si sur...
Nanocrystalline silicon carbide (nc-SiC) films are prepared by low-frequency inductively coupled pla...
International audienceThe chemical vapor deposition (CVD) of silicon carbide from vinyltrichlorosila...
Heteroepitaxial growth of silicon carbide (SiC) on graphene/SiO2/Si substrates was carried out using...
International audienceIn the CH3SiCl3-H2 CVD system, from which SiC-based films are prepared, the su...
International audienceThe paper deals with the properties of silicon films obtained by low-pressure ...
The approaches to conformal and superconformal deposition developed by Abelson and Girolami for a lo...
The depositions of amorphous and cubic-crystal SiC from a new chemical vapor deposition source, diet...