Laser crystallization for large-area electronics

Abstract Laser crystallization is reviewed for the purpose of fabrication of polycrystalline silicon thin film transistors (poly-Si TFTs). Laser-induced rapid heating is important for formation of crystalline films with a low thermal bud-get. Reduction of electrically active defects located at grain boundaries is essential for improving electrical properties of poly-Si films and achieving poly-Si TFTs with high perfor-mances. The internal film stress is attractive to increase the carrier mobility. Recent developments in laser crystalliza-tion methods with pulsed and continuous-wave lasers are also reviewed. Control of heat flow results in crystalline grain growth in the lateral direction, which is important for fabrication of large crystalline grains. We also report an an-nealing method using a high-power infrared semiconductor laser. High-power lasers will be attractive for rapid forma-tion of crystalline films over a large area and activation of silicon with impurity atoms. PACS 85.30.Tv · 61.72.Uf · 81.10.Jt · 02.60.Cb · 64.70.D-