Metal Source/Drain Schottky Field Effect Transistors and Schottky CMOS Circuitry

Abstract—Field effect transistors in which the sources and drains are made of metal (aluminum), as opposed to silicon, have been conceived, designed, fabricated, and tested. For the n-body device, ambipolar operation is demonstrated, and two unique characteristics – leakage asymmetry and first quadrant negative differential resistance (NDR) – are identified and characterized. The p-body device failed, due to defect propagation through the gate dielectric. Additionally, critical issues involving real-world Schottky CMOS operation are identified for the first time, and a potential solution is proposed and discussed. The long-term goal of the presented work is 3D circuit integration, which is also discussed. Index Terms—3D circuitry, metal source/drain, MSD SFET