TWO DIMENSIONAL PROCESS SIMULATION USING A QUADRATIC FINITE ELEMENT DISCRETISATION. THE CONNECTION WITH DEVICE SIMULATION

A two dimensional process simulator-MO.BI.DI.C- has been developed. The program can simulate ion implantation through arbitrary masks as well as the interaction between im-purity diffusions under inert or oxidizing ambients. For boron and arsenic, the diffusion model incorporates electric field, charged vacancies and clustering effects. The phosphorus dif-fusion is based upon Fair's model. MO.BI.DI.C can handle various boundary conditions that allow the simulation of pre-deposition, evaporation and segregation. The two dimensional oxide growth is given by an analytical formula, and the diffu-sion equations are solved in the evolutive physical domain. Finite element method, with quadratic 6-noded triangles gives the spatial discretisation while an incomplete implicite scheme iterates the temporel problem. The process simulation results can be introduced in the device analyzer MINIMOS. This paper presents the process simulator, namely the basic models and the numerical approach, as well as the process device con-nection in the case of a standard n-MOS polysilicon gate tech-nology. 1