We introduce a scaled ensemble Monte Carlo (SEMQ technique to simulate high field electron transport. This technique is designed to improve the accuracy of the phase-space statistics of the non-equilibrium carrier distribution. As recognized in weighted-ensemble Monte Carlo, increasing the number of simulated particles is inefficient, since it substantially increases the computation times without ensuring adequate representation of the sparsely populated regions of phase space. A scaled scheme is especially important for these transient simulations, since one cannot average the electronic trajectories over sufficiently long times. The SEMC technique we propose overcomes this problem by redistributing the computational effort to weight the l...
Impact ionization and thermionic tunnelling as two possible breakdown mechanisms in scaled pseudomor...
The energy-dependent impact ionization rate in silicon is derived by a first-order pertur-bation the...
Impact ionization is important for electron transport in wide-band-gap semiconductors at high electr...
A single scatter electron Monte Carlo code (SSMC), CREEP, has been written which bridges the gap bet...
A new model for impact ionization in Si is presented, which goes beyond the limitations of the Keldy...
Electron transport simulation plays an important role in the dose calculation in electron cancer the...
A microscopic, single-particle view of impact ionization in silicon is obtained from a modified full...
A single scatter electron Monte Carlo code (SSMC), CREEP, has been written which bridges the gap bet...
The explicit impact of ionization dynamics on the non-hydrodynamic spatiotemporal development of ele...
This work investigates the transport of electrons having energies near those of the atomic binding l...
The ensemble Monte Carlo simulation of deep submicron silicon MOSFET with length is performed. ...
International audienceWe calculate the cross-section of ionization by free-electron impacts in high ...
A simplified hydrodynamic (HD) model has been developed for the study of impact ionization (II) phen...
We have studied energy distribution of fast electrons passing through a highly compressed core plasm...
When the fractional ionization of a plasma exceeds 10$\sp{-5}- 10\sp{-4}$, electron-electron (e-e) c...
Impact ionization and thermionic tunnelling as two possible breakdown mechanisms in scaled pseudomor...
The energy-dependent impact ionization rate in silicon is derived by a first-order pertur-bation the...
Impact ionization is important for electron transport in wide-band-gap semiconductors at high electr...
A single scatter electron Monte Carlo code (SSMC), CREEP, has been written which bridges the gap bet...
A new model for impact ionization in Si is presented, which goes beyond the limitations of the Keldy...
Electron transport simulation plays an important role in the dose calculation in electron cancer the...
A microscopic, single-particle view of impact ionization in silicon is obtained from a modified full...
A single scatter electron Monte Carlo code (SSMC), CREEP, has been written which bridges the gap bet...
The explicit impact of ionization dynamics on the non-hydrodynamic spatiotemporal development of ele...
This work investigates the transport of electrons having energies near those of the atomic binding l...
The ensemble Monte Carlo simulation of deep submicron silicon MOSFET with length is performed. ...
International audienceWe calculate the cross-section of ionization by free-electron impacts in high ...
A simplified hydrodynamic (HD) model has been developed for the study of impact ionization (II) phen...
We have studied energy distribution of fast electrons passing through a highly compressed core plasm...
When the fractional ionization of a plasma exceeds 10$\sp{-5}- 10\sp{-4}$, electron-electron (e-e) c...
Impact ionization and thermionic tunnelling as two possible breakdown mechanisms in scaled pseudomor...
The energy-dependent impact ionization rate in silicon is derived by a first-order pertur-bation the...
Impact ionization is important for electron transport in wide-band-gap semiconductors at high electr...