Add to ORKGKatja Kuitunen: Positron annihilation studies on vacancy defects in group IV semiconductor
We use positron annihilation to study vacancy defects in GaAs grown at low temperatures (LT-GaAs). T...
Positron states at pure monovacancies and divacancies and vacancy-phosphorus pairs in Si as well as ...
SIGLEAvailable from British Library Document Supply Centre- DSC:DX184348 / BLDSC - British Library D...
Electrical properties of semiconductor materials are greatly influenced by point defects such as vac...
At a vacant lattice cell positron-ion repulsion is reduced leading to positron trapping. This causes...
Positron annihilation spectroscopy is particularly suitable for studying vacancy-type defects in sem...
The purpose of this paper is to present a short review and comparison of the results obtained with p...
Positron trapping into vacancies in semiconductors is studied on the basis of Fermis golden-rule cal...
Abstract: The basic principles of positron annihilation physics are briefly discussed and the three ...
Positron annihilation (PA) is a sensitive technique for detection of vacancy-type defects in crystal...
Various point defects in silicon are studied theoretically from the point view of positron annihilat...
Positron Annihilation Spectroscopy (PAS) is a sensitive probe for studying the electronic structure ...
We present a comprehensive study of vacancy and vacancy-impurity complexes in InN combining positron...
Pfeiffer W, Liszkay L, Burchard A, et al. Study of indium implanted GaAs: positron annihilation and ...
Positron annihilation spectroscopy is a materials characterization method especially applicable for ...
We use positron annihilation to study vacancy defects in GaAs grown at low temperatures (LT-GaAs). T...
Positron states at pure monovacancies and divacancies and vacancy-phosphorus pairs in Si as well as ...
SIGLEAvailable from British Library Document Supply Centre- DSC:DX184348 / BLDSC - British Library D...
Electrical properties of semiconductor materials are greatly influenced by point defects such as vac...
At a vacant lattice cell positron-ion repulsion is reduced leading to positron trapping. This causes...
Positron annihilation spectroscopy is particularly suitable for studying vacancy-type defects in sem...
The purpose of this paper is to present a short review and comparison of the results obtained with p...
Positron trapping into vacancies in semiconductors is studied on the basis of Fermis golden-rule cal...
Abstract: The basic principles of positron annihilation physics are briefly discussed and the three ...
Positron annihilation (PA) is a sensitive technique for detection of vacancy-type defects in crystal...
Various point defects in silicon are studied theoretically from the point view of positron annihilat...
Positron Annihilation Spectroscopy (PAS) is a sensitive probe for studying the electronic structure ...
We present a comprehensive study of vacancy and vacancy-impurity complexes in InN combining positron...
Pfeiffer W, Liszkay L, Burchard A, et al. Study of indium implanted GaAs: positron annihilation and ...
Positron annihilation spectroscopy is a materials characterization method especially applicable for ...
We use positron annihilation to study vacancy defects in GaAs grown at low temperatures (LT-GaAs). T...
Positron states at pure monovacancies and divacancies and vacancy-phosphorus pairs in Si as well as ...
SIGLEAvailable from British Library Document Supply Centre- DSC:DX184348 / BLDSC - British Library D...