Preparation and Characterization of Chemically Deposited Cadmium Sulphide Thin Films.

A thin film of Cadmium Sulphide on quartz substrate was deposited by Chemical Bath Method (CBD). The deposition was done at room temperature and annealed for 1hr at 1600C. A band gap of 2.41eV was recorded by optical absorption measurement. The dark conductivity of as prepared film E was 18mA and a photocurrent of 30mA under a 1kWm-2 tungsten Halogen illumination. When annealed, the dark current was increased to about 38mA and a photocurrent of about 60mA was obtained. This result shows that post deposition annealing will enhance the performance of CdS films in the area of optoelectronic application. (Keywords: thin film, optoelectronic, photocurrent