Abstract. Effect of illumination on mobility has been studied from the photocurrent decay characteristics of thermally evaporated CdSe thin films deposited on suitably cleaned glass substrate held at elevated substrate temperatures. The study indicates that the mobilities of the carriers of different trap levels are activated due to the energy of incident illumination, which results in the existence of two distinct trap levels. In each trap depth the energy of the trap increases linearly. It infers that there is a linear distribution of traps of different energies below the conduction band
In this study, semiconducting thin films of undoped and In doped CdSe have been deposited by convent...
In this work, some structural, electrical and optical properties of thermally evaporated CdS thin fi...
CdS films were prepared by thermal evaporation technique at thickness 1 µm on glass substrates and t...
CdSe thin films were grown by thermal evaporation technique under a vacuum of 10-6 torr on glass sub...
110-114Photo-electronic properties of CdS thin films (0.25μm thick) grown by thermal evaporation (TE...
The trap density Nt and mobility-lifetime product µt in CdSe thin films are investigated combining d...
Abstract. The current (I)–voltage (V) characteristics of thermally evaporated CdSe thin films having...
Polycrystalline cadmium selenide thin films are prepared in different thicknesses and substrate temp...
In this study, electrical, photo-electrical, optical and structural analyses of CdSe thin films depo...
Electrical instability of operation of the thin film transistor is the major problem preventing the ...
Thin films of CdSe with thicknesses of 50, 75 and 100 nm were prepared by physical vapour deposition...
Carrier transport in thermally-evaporated cadmium selenide films has been investigated using the mod...
The aim of this research is to prepare ( CdSe0.5Te0.5) thin films by vacuum thermal evaporation meth...
In this work, some structural, electrical and optical properties of thermally evaporated CdS thin fi...
In this paper we have studied the electrical properties and photoconductivity of CdSe thin films, pr...
In this study, semiconducting thin films of undoped and In doped CdSe have been deposited by convent...
In this work, some structural, electrical and optical properties of thermally evaporated CdS thin fi...
CdS films were prepared by thermal evaporation technique at thickness 1 µm on glass substrates and t...
CdSe thin films were grown by thermal evaporation technique under a vacuum of 10-6 torr on glass sub...
110-114Photo-electronic properties of CdS thin films (0.25μm thick) grown by thermal evaporation (TE...
The trap density Nt and mobility-lifetime product µt in CdSe thin films are investigated combining d...
Abstract. The current (I)–voltage (V) characteristics of thermally evaporated CdSe thin films having...
Polycrystalline cadmium selenide thin films are prepared in different thicknesses and substrate temp...
In this study, electrical, photo-electrical, optical and structural analyses of CdSe thin films depo...
Electrical instability of operation of the thin film transistor is the major problem preventing the ...
Thin films of CdSe with thicknesses of 50, 75 and 100 nm were prepared by physical vapour deposition...
Carrier transport in thermally-evaporated cadmium selenide films has been investigated using the mod...
The aim of this research is to prepare ( CdSe0.5Te0.5) thin films by vacuum thermal evaporation meth...
In this work, some structural, electrical and optical properties of thermally evaporated CdS thin fi...
In this paper we have studied the electrical properties and photoconductivity of CdSe thin films, pr...
In this study, semiconducting thin films of undoped and In doped CdSe have been deposited by convent...
In this work, some structural, electrical and optical properties of thermally evaporated CdS thin fi...
CdS films were prepared by thermal evaporation technique at thickness 1 µm on glass substrates and t...