The reaction chemistry of zinc telluride (ZnTe) metalorganic vapor-phase epitaxy (MOVPE) from dimethylzinc (DMZn), diethylzinc (DEZn), and diisopropyltelluride (DIPTe) has been studied using on-line gas chromatography and infrared spectroscopy. Two growth regimes have been discovered: one at low values of the II/VI ratio and the other at higher values of the II/VI ratio. In the first regime, the group VI compound is consumed in excess, while in the second regime, the group II compound is consumed in excess. The crossover point lies at II/VI) 5.0 for DMZn and at II/VI) 0.3 for DEZn. Stoichiometric ZnTe is deposited under all growth conditions. The excess DIPTe consumed is converted into volatile diisopropyl-ditelluride and isopropyltellurol....
Metalorganic Chemical Vapor Deposition (MOCVD) and Chemical Beam Epitaxy (CBE) are two of the most p...
ZnSe was grown using the gaseous source epitaxial methods of metalorganic molecular beam epitaxy (MO...
The effect of precursors vapour stoichiometry on the morphological, structural and electrical proper...
The metalorganic vapor phase epitaxy growth of ZnTe by di-isopropyl-telluride and di-methyl-zinc (Me...
using on-line infrared spectroscopy to monitor the feed and effluent gases. The film composition was...
The growth of ZnTe by atmospheric pressure metalorganic vapour phase epitaxy on (100)ZnTe:P substrat...
Organometallic chemical vapor deposition (OMCVD) of ZnTe was explored with tert-butyl(trifluoromethy...
The structure, morphology, and luminescence of homoepitaxial ZnTe layers grown by metalorganic vapor...
This work briefly reviews the state of the art of p-type doping metalorganic vapor phase epitaxy (MO...
The phase diagrams for the MOVPE growth of ZnTe and ZnSeTe have been proposed for the first time, ba...
ZnTe was grown by unseeded vapor deposition. In this technique, source materials of Zn (99.8% purity...
A novel route for the introduction of well-defined zinc species into ZSM-5 zeolite via chemical vapo...
The metalorganic vapour phase epitaxy of ZnTe on single crystal (100)ZnTe:P wafers is reported. The ...
A novel route for the introduction of well-defined zinc species into ZSM-5 zeolite via chemical vapo...
Fabrication of III-V and II-VI semiconductor optoelectronic devices depends strongly on the success ...
Metalorganic Chemical Vapor Deposition (MOCVD) and Chemical Beam Epitaxy (CBE) are two of the most p...
ZnSe was grown using the gaseous source epitaxial methods of metalorganic molecular beam epitaxy (MO...
The effect of precursors vapour stoichiometry on the morphological, structural and electrical proper...
The metalorganic vapor phase epitaxy growth of ZnTe by di-isopropyl-telluride and di-methyl-zinc (Me...
using on-line infrared spectroscopy to monitor the feed and effluent gases. The film composition was...
The growth of ZnTe by atmospheric pressure metalorganic vapour phase epitaxy on (100)ZnTe:P substrat...
Organometallic chemical vapor deposition (OMCVD) of ZnTe was explored with tert-butyl(trifluoromethy...
The structure, morphology, and luminescence of homoepitaxial ZnTe layers grown by metalorganic vapor...
This work briefly reviews the state of the art of p-type doping metalorganic vapor phase epitaxy (MO...
The phase diagrams for the MOVPE growth of ZnTe and ZnSeTe have been proposed for the first time, ba...
ZnTe was grown by unseeded vapor deposition. In this technique, source materials of Zn (99.8% purity...
A novel route for the introduction of well-defined zinc species into ZSM-5 zeolite via chemical vapo...
The metalorganic vapour phase epitaxy of ZnTe on single crystal (100)ZnTe:P wafers is reported. The ...
A novel route for the introduction of well-defined zinc species into ZSM-5 zeolite via chemical vapo...
Fabrication of III-V and II-VI semiconductor optoelectronic devices depends strongly on the success ...
Metalorganic Chemical Vapor Deposition (MOCVD) and Chemical Beam Epitaxy (CBE) are two of the most p...
ZnSe was grown using the gaseous source epitaxial methods of metalorganic molecular beam epitaxy (MO...
The effect of precursors vapour stoichiometry on the morphological, structural and electrical proper...