A new two-dimensional multilayer process simulator based on finite element method has been developed to accuratly study advanced silicon technologies. The basic processing steps simulation are presented and numerical problems arising from the multilayer structures are outlined. Finally, the capabilities of the program are demonstrated with the simulation of a self-aligned polysilicon bipolar transistor
Process simulation has shown to be an important tool for the development in the fields of ULSI and p...
A physically-based dynamic simulator has been constructed to investigate the time-dependent behavior...
La simulation des processus technologiques est très importante pour la fabrication des circuits inté...
A two dimensional process simulator-MO.BI.DI.C- has been developed. The program can simulate ion imp...
In contrast to the early times of simulation where the tools were dedicated either to the simulation...
In VLSI development process simulation is needed to understand the interaction between successive pr...
This paper presents a new 3D simulator, an extended version of our previous developed 2D simulator [...
Since the publication of the first one-dimensional process simulation programs, increasing activitie...
Complete simulation of advanced double layer polysilicon bipolar technology is presented using 2D pr...
This paper presents a new 2-D simulator, which can simulate etching, deposition and arbitrary sequen...
This paper presents a new 2-D simulator, which can simulate etching, deposition and arbitrary sequen...
A program for the three-dimensional (3D) simulation of layer depositionhas been developed. It is bas...
We have developed fast IC process simulation technique based on an empirical resist and etch models ...
A multizone adaptive grid generation technique is developed and used with a curvilinear finite-volum...
The increasing complexity of the demands in device- and particularly process simulation calls for si...
Process simulation has shown to be an important tool for the development in the fields of ULSI and p...
A physically-based dynamic simulator has been constructed to investigate the time-dependent behavior...
La simulation des processus technologiques est très importante pour la fabrication des circuits inté...
A two dimensional process simulator-MO.BI.DI.C- has been developed. The program can simulate ion imp...
In contrast to the early times of simulation where the tools were dedicated either to the simulation...
In VLSI development process simulation is needed to understand the interaction between successive pr...
This paper presents a new 3D simulator, an extended version of our previous developed 2D simulator [...
Since the publication of the first one-dimensional process simulation programs, increasing activitie...
Complete simulation of advanced double layer polysilicon bipolar technology is presented using 2D pr...
This paper presents a new 2-D simulator, which can simulate etching, deposition and arbitrary sequen...
This paper presents a new 2-D simulator, which can simulate etching, deposition and arbitrary sequen...
A program for the three-dimensional (3D) simulation of layer depositionhas been developed. It is bas...
We have developed fast IC process simulation technique based on an empirical resist and etch models ...
A multizone adaptive grid generation technique is developed and used with a curvilinear finite-volum...
The increasing complexity of the demands in device- and particularly process simulation calls for si...
Process simulation has shown to be an important tool for the development in the fields of ULSI and p...
A physically-based dynamic simulator has been constructed to investigate the time-dependent behavior...
La simulation des processus technologiques est très importante pour la fabrication des circuits inté...
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