The work presented in this paper describes adhesive wafer level bonding with structured intermediate bonding material to achieve defined gaps. Benzocyclobutene (BCB) was used as bonding material. The patterning of this material was done either by dry etching of the BCB or by using a photosensitive version of the material. The process parameters needed to achieve a high bond quality have been investigated. 1
etching, adhesive A variety of adhesives have been demonstrated for use in thinning and backside pro...
Tungsten is a promising bulk material for microsystem applications for its high melting point, radia...
The process of bonding InP/InGaAsP dies to a processed silicon-on-insulator wafer using sub-300 nm l...
The paper gives an overview of recently developed processes for Benzocyclobutene (BCB)-based pattern...
3D stacking, one of the 3D integration technologies using through silicon vias (TSVs), is considered...
Presented is a novel process of benzo-cyclo-butene (BCB) bonding for a wafer level package with stam...
In this paper, intermediate layer bonding technologies using SU-8 and BCB are successfully demonstra...
We report a versatile method for improving post-bonding wafer alignment accuracy and BCB thickness u...
Divinylsiloxane-bis-benzocyclobutene (DVS-BCB) has attracted significant attention as an intermediat...
In this paper, a TSV last wafer level 3D integration scheme using pre-patterned benzocyclobutene (BC...
International audienceAdhesive wafer bonding is an interesting key technology for heterogeneous inte...
Heterogeneous integration of III-V semiconductor materials on a silicon-on-insulator (SOI) platform ...
An adhesive bonding technique for wafer-level encapsulation of high aspect ratio microstructures (HA...
Semiconductor wafer bonding has been a subject of interestfor many years and a wide variety of wafer...
Wafer scale co-integration of the EICs to the PICs using the adhesion bonding technique can open up ...
etching, adhesive A variety of adhesives have been demonstrated for use in thinning and backside pro...
Tungsten is a promising bulk material for microsystem applications for its high melting point, radia...
The process of bonding InP/InGaAsP dies to a processed silicon-on-insulator wafer using sub-300 nm l...
The paper gives an overview of recently developed processes for Benzocyclobutene (BCB)-based pattern...
3D stacking, one of the 3D integration technologies using through silicon vias (TSVs), is considered...
Presented is a novel process of benzo-cyclo-butene (BCB) bonding for a wafer level package with stam...
In this paper, intermediate layer bonding technologies using SU-8 and BCB are successfully demonstra...
We report a versatile method for improving post-bonding wafer alignment accuracy and BCB thickness u...
Divinylsiloxane-bis-benzocyclobutene (DVS-BCB) has attracted significant attention as an intermediat...
In this paper, a TSV last wafer level 3D integration scheme using pre-patterned benzocyclobutene (BC...
International audienceAdhesive wafer bonding is an interesting key technology for heterogeneous inte...
Heterogeneous integration of III-V semiconductor materials on a silicon-on-insulator (SOI) platform ...
An adhesive bonding technique for wafer-level encapsulation of high aspect ratio microstructures (HA...
Semiconductor wafer bonding has been a subject of interestfor many years and a wide variety of wafer...
Wafer scale co-integration of the EICs to the PICs using the adhesion bonding technique can open up ...
etching, adhesive A variety of adhesives have been demonstrated for use in thinning and backside pro...
Tungsten is a promising bulk material for microsystem applications for its high melting point, radia...
The process of bonding InP/InGaAsP dies to a processed silicon-on-insulator wafer using sub-300 nm l...