Abstract—We report an 18-GHz clock-rate second-order con-tinuous-time – analog–digital converter (ADC) implemented using InP-transferred substrate HBTs. Under two-tone test condi-tions, the ADC achieved 43 dB and 33 dB SNR at signal frequencies of 500 MHz and 990 MHz, respectively. The IC occupied 1.95 mm2 die area and dissipated 1.5 W. Index Terms—ADC, delta–sigma, heterojunction bipolar tran-sistor, substrate transfer. I
electron transport but inferior scaling and parasitic reduction. Figures of merit for mixed-signal I...
We present ongoing work towards the development of submillimeter wave transistors with goals of real...
With the unremitting progress in VLSI technology, there is a commensurate increase in performance de...
tinuous-time – analog–digital converter (ADC) that achieves 57.4-, 51.7-, and 40.2-dB SNR at signal...
Continuous time delta-sigma (CT(Delta-Sigma)) analog-todigital converters (ADCs) are capable of samp...
The trend in modern communications and radar systems is to move the analog-to digital interface as f...
Abstract—This paper presents a 40-GS/s continuous-time band-pass analog-to-digital converter center...
Direct digital synthesizer (DDS) is an essential part of the multi-band digital phased array radar s...
Abstract—Compared to SiGe, InP HBTs offer superior electron transport properties but inferior scalin...
An increasing demand for multi-GHz direct digital synthesizers has prompted research for high-speed ...
This paper presents a 2.2 GHz continuous-time Δ Σ ADC that achieves-102 dBc THD and 77 dB SNDR in 25...
Compared to SiGe, InP HBTs offer superior electron transport properties but inferior scaling and par...
Transferred-substrate heterojunction bipolar transistors (HBTs) have very high fmax and are potentia...
A low-power (~400mW) high-speed (2-4GS/s) 4-bit Analogue-to-Digital Converter (ADC) based on InP/InG...
[[abstract]]InAs–InGaAs graded emitter contact layer was incorporated into the InGaAsSb–GaAsSb/InP g...
electron transport but inferior scaling and parasitic reduction. Figures of merit for mixed-signal I...
We present ongoing work towards the development of submillimeter wave transistors with goals of real...
With the unremitting progress in VLSI technology, there is a commensurate increase in performance de...
tinuous-time – analog–digital converter (ADC) that achieves 57.4-, 51.7-, and 40.2-dB SNR at signal...
Continuous time delta-sigma (CT(Delta-Sigma)) analog-todigital converters (ADCs) are capable of samp...
The trend in modern communications and radar systems is to move the analog-to digital interface as f...
Abstract—This paper presents a 40-GS/s continuous-time band-pass analog-to-digital converter center...
Direct digital synthesizer (DDS) is an essential part of the multi-band digital phased array radar s...
Abstract—Compared to SiGe, InP HBTs offer superior electron transport properties but inferior scalin...
An increasing demand for multi-GHz direct digital synthesizers has prompted research for high-speed ...
This paper presents a 2.2 GHz continuous-time Δ Σ ADC that achieves-102 dBc THD and 77 dB SNDR in 25...
Compared to SiGe, InP HBTs offer superior electron transport properties but inferior scaling and par...
Transferred-substrate heterojunction bipolar transistors (HBTs) have very high fmax and are potentia...
A low-power (~400mW) high-speed (2-4GS/s) 4-bit Analogue-to-Digital Converter (ADC) based on InP/InG...
[[abstract]]InAs–InGaAs graded emitter contact layer was incorporated into the InGaAsSb–GaAsSb/InP g...
electron transport but inferior scaling and parasitic reduction. Figures of merit for mixed-signal I...
We present ongoing work towards the development of submillimeter wave transistors with goals of real...
With the unremitting progress in VLSI technology, there is a commensurate increase in performance de...