Add to ORKGRobust and efficient grid refinement strategies for an adaptive multigrid simu-lation of diffusion processes from implanted impurity profiles have been presented. The refinement criteria are based on global and local discretization errors estimated by extrapolation techniques. The local discretization error for the initial grid re-finement and the global discretization error for the grid refinement during diffusion simulation are compatible and controlled by the same, problem independent, rela-tive error parameter.
Stochastic models of chemical systems are often analysed by solving the corresponding Fokker-Planck ...
A new numerical method for semiconductor device simulation is presented. The additive decomposition ...
Abstract- Mesh generation and adaption for solving dopant diffusion in process simulation is a diffi...
Modeling of semiconductor devices leads to a nonlinear singular perturbed system of partial differen...
Abstract-Modern numerical process simulators are becom-ing increasingly complicated in both physical...
This paper presents a multigrid approach using adaptive local refinements for the two-dimensional si...
A comprehensive study on efficency of multigrid methods in two-dimensional impurity redistribution s...
A multizone adaptive grid generation technique is developed and used with a curvilinear finite-volum...
*Abstract. * For the solution of convection-diffusion problems we present a multilevel self-adaptive...
AbstractWe consider the use of adaptive mesh strategies for solution of problems exhibiting boundary...
We present an algorithm for adaptive mesh refinement applied to mesoscopic stochastic simulations of...
The Drift Diffusion equations constitute the simplest and most commonly used model for simulating se...
Abstract- We present simulations of IC-fabrication steps and of the electric behaviour of devices us...
Numerical solution schemes based on adaptive grid redistribution and iterative techniques are invest...
Direct simulation of filamentary gas discharges like streamers or dielectric barrier micro-discharge...
Stochastic models of chemical systems are often analysed by solving the corresponding Fokker-Planck ...
A new numerical method for semiconductor device simulation is presented. The additive decomposition ...
Abstract- Mesh generation and adaption for solving dopant diffusion in process simulation is a diffi...
Modeling of semiconductor devices leads to a nonlinear singular perturbed system of partial differen...
Abstract-Modern numerical process simulators are becom-ing increasingly complicated in both physical...
This paper presents a multigrid approach using adaptive local refinements for the two-dimensional si...
A comprehensive study on efficency of multigrid methods in two-dimensional impurity redistribution s...
A multizone adaptive grid generation technique is developed and used with a curvilinear finite-volum...
*Abstract. * For the solution of convection-diffusion problems we present a multilevel self-adaptive...
AbstractWe consider the use of adaptive mesh strategies for solution of problems exhibiting boundary...
We present an algorithm for adaptive mesh refinement applied to mesoscopic stochastic simulations of...
The Drift Diffusion equations constitute the simplest and most commonly used model for simulating se...
Abstract- We present simulations of IC-fabrication steps and of the electric behaviour of devices us...
Numerical solution schemes based on adaptive grid redistribution and iterative techniques are invest...
Direct simulation of filamentary gas discharges like streamers or dielectric barrier micro-discharge...
Stochastic models of chemical systems are often analysed by solving the corresponding Fokker-Planck ...
A new numerical method for semiconductor device simulation is presented. The additive decomposition ...
Abstract- Mesh generation and adaption for solving dopant diffusion in process simulation is a diffi...