Add to ORKGMeasurements of photoconductivity and relaxation of positive and negative charge in amor-phous thin As2Se3 layers are discussed. Photosensitive donor- and acceptor-like centers of 1.05 eV and 0.76 eV energies from valence band were revealed. These energies are constant and independent of light intensity in the range 1.5×109- 1.5×1015 quanta/(cm2s) and of energy of quanta. Wide quasicontinuously distribution trap centers with maximums at 0.62, 0.87 and 1.05 eV were found by relaxation measurements of positive and negative charge
Temperature and intensity dependence of photoconductivity is studied in a-Se 90 Ge 10-x In x thin fi...
The variation of photoconductivity with various parameters (wavelength, light intensity, electric fi...
The dichroism in amorphous As2Se3 induced by a polarized beam of near band-gap light (λ = 632.8...
Steady-state and transient characteristics of photoconductivity in amorphous thermally deposited AsS...
Persistent photoconductivity has been studied in amorphous As2Se3 films doped with Sn impurity by co...
Modulated photocurrent measurements in amorphous arsenic triselenide (a-As2Se3) is reported. Par-tic...
Optical bias effect on transient photocurrent of As2Se3: Snx (x=0¸1.0 at.%) amorphous films, excited...
The photoconductivity of amorphous As2S8 chalcogenide film under the irradiation of bandgap light is...
ABSTRACT A modification of Kuhn technique for measurements of photocapacitance of Al/a-As2Se3 Schott...
Photocurrent changes with light soaking have been studied in amorphous As2S~Se,Te!3 and Se and cryst...
Measurements of the mobility and degree of transit pulse dispersion as a function of temperature bet...
A mille-feuille structured amorphous selenium (a-Se)-arsenic selenide (As2Se3) multi-layered thin fi...
Modulated photocurrent phase shift measurements (MPC) have been used to probe the valence band tail ...
The time dependent photocurrent of $Al_2_0 As_x Te_8_0 - x$ glasses has been studied at low tempera...
Steady-state photocurrents are measured in amorphous selenium (a-Se) films as function of illuminati...
Temperature and intensity dependence of photoconductivity is studied in a-Se 90 Ge 10-x In x thin fi...
The variation of photoconductivity with various parameters (wavelength, light intensity, electric fi...
The dichroism in amorphous As2Se3 induced by a polarized beam of near band-gap light (λ = 632.8...
Steady-state and transient characteristics of photoconductivity in amorphous thermally deposited AsS...
Persistent photoconductivity has been studied in amorphous As2Se3 films doped with Sn impurity by co...
Modulated photocurrent measurements in amorphous arsenic triselenide (a-As2Se3) is reported. Par-tic...
Optical bias effect on transient photocurrent of As2Se3: Snx (x=0¸1.0 at.%) amorphous films, excited...
The photoconductivity of amorphous As2S8 chalcogenide film under the irradiation of bandgap light is...
ABSTRACT A modification of Kuhn technique for measurements of photocapacitance of Al/a-As2Se3 Schott...
Photocurrent changes with light soaking have been studied in amorphous As2S~Se,Te!3 and Se and cryst...
Measurements of the mobility and degree of transit pulse dispersion as a function of temperature bet...
A mille-feuille structured amorphous selenium (a-Se)-arsenic selenide (As2Se3) multi-layered thin fi...
Modulated photocurrent phase shift measurements (MPC) have been used to probe the valence band tail ...
The time dependent photocurrent of $Al_2_0 As_x Te_8_0 - x$ glasses has been studied at low tempera...
Steady-state photocurrents are measured in amorphous selenium (a-Se) films as function of illuminati...
Temperature and intensity dependence of photoconductivity is studied in a-Se 90 Ge 10-x In x thin fi...
The variation of photoconductivity with various parameters (wavelength, light intensity, electric fi...
The dichroism in amorphous As2Se3 induced by a polarized beam of near band-gap light (λ = 632.8...