PULSED LASER ATOM PROBE ANALYSIS OF 111-V COMPOUND SEMICONDUCTORS

Abstract- The pulsed laser atom probe has been shown to give stoichiometrically correct analyses of GaAs and InAs. Temperature rises under pulsed laser irradiation are investigated and the generation of As cluster ions is found to be primarily due to field evaporation at elevated temperatures. Preliminary results on the analysis of ternary materials is presented, showing local composition variations in a GaAlAs layer. Detailed information on the microchemistry of semiconductor materials and interfaces is of crucial importance not only from a technological viewpoint but also for obtaining fundamental information on device operation. This is especially tne case for the complex chemistry of compound semiconductors. In particular th