Theory, development, and applications of the Advanced Compact MOSFET (ACM) model

This paper presents a physics-based advanced compact MOSFET (ACM) model. The ACM model is composed of very simple expressions, valid for any inversion level, conserves charge and preserves the source-drain symmetry of the transistor. We highlight the theory and approximations behind the ACM model and show its usefulness as a powerful tool for characterization, simulation, and design