Add to ORKGMicro-Raman spectroscopy to study local mechanical stress in silicon integrated circuit
In this research, micro-Raman spectroscopy is employed to examine, and characterize the residual str...
Micromachining can result in residual stress in a wafer. This paper puts forward an online measuring...
Stress in local isolation structures is studied by micro‐Raman spectroscopy. The results are correla...
Due to assembly processes in microelectronics packaging, semiconductor materials are under undesired...
The possibilities and limitations of micro Raman spectroscopy (muRS), convergent beam electron diffr...
textThree-dimensional (3-D) integration as an effective method to overcome the wiring limit imposed ...
Three-dimensional (3D) micro-Raman spectroscopy mapping of mechanical stress induced by Cu through-S...
This paper provides a detailed description explaining how to calculate the relation between the sili...
Two kinds of samples were investigated with micro-Raman spectroscopy. MOS structures having poly-sil...
characterization of silicon stress near through-silicon vias and its inline monitoring application
Micron-scale characterization of mechanical stresses is essential for the successful design and oper...
Local mechanical stresses in semiconductor devices, introduced e.g. by dicing, are an important manu...
Three techniques are discussed that can provide information on process-induced local mechanical stre...
The stress in polycrystalline silicon due to CoSi2 in the scale of ??m in integrated circuit by micr...
Micro-Raman (RS) and micro-photoluminescence spectroscopy (PLS) are demonstrated as valuable charact...
In this research, micro-Raman spectroscopy is employed to examine, and characterize the residual str...
Micromachining can result in residual stress in a wafer. This paper puts forward an online measuring...
Stress in local isolation structures is studied by micro‐Raman spectroscopy. The results are correla...
Due to assembly processes in microelectronics packaging, semiconductor materials are under undesired...
The possibilities and limitations of micro Raman spectroscopy (muRS), convergent beam electron diffr...
textThree-dimensional (3-D) integration as an effective method to overcome the wiring limit imposed ...
Three-dimensional (3D) micro-Raman spectroscopy mapping of mechanical stress induced by Cu through-S...
This paper provides a detailed description explaining how to calculate the relation between the sili...
Two kinds of samples were investigated with micro-Raman spectroscopy. MOS structures having poly-sil...
characterization of silicon stress near through-silicon vias and its inline monitoring application
Micron-scale characterization of mechanical stresses is essential for the successful design and oper...
Local mechanical stresses in semiconductor devices, introduced e.g. by dicing, are an important manu...
Three techniques are discussed that can provide information on process-induced local mechanical stre...
The stress in polycrystalline silicon due to CoSi2 in the scale of ??m in integrated circuit by micr...
Micro-Raman (RS) and micro-photoluminescence spectroscopy (PLS) are demonstrated as valuable charact...
In this research, micro-Raman spectroscopy is employed to examine, and characterize the residual str...
Micromachining can result in residual stress in a wafer. This paper puts forward an online measuring...
Stress in local isolation structures is studied by micro‐Raman spectroscopy. The results are correla...