Résumé. 2014 L’essentiel de l’interférométrie des rayons X et ses applications principales sont revus. Des variations très petites de la constante réticulaire, qui se trouvent même dans des cristaux de la meilleure qualité, ont été étudiées à l’aide de topographie ordinaire et celle à franges moirées. Des déformations correspondantes aux variations de 0394d/d ~ 10-7 s’observent dans des grands cristaux parfaits. Abstract. 2014 The essentials of X-ray interferometry and its principal application fields are reviewed. Very small lattice disturbances which are present even in highest quality crystals of silicon have been investigated by ordinary and moire topography. Strains corresponding to 0394d/d variations of 10-7 are found in large perfect...
Future measurements of the silicon lattice-parameter by combined X-ray and optical interferometry re...
We have developed a hard x-ray interferometer known in visible and EUV optics as shearing interferom...
ABSTRACT Various amounts of strain and lattice deformation were introduced into <111> Si subst...
The essentials of X-ray interferometry and its principal application fields are reviewed. Very small...
By using the formalism developed in Part I, we investigated errors in the measurement of the silicon...
Highly purified silicon single crystals are excellent standards for length measurements at the atomi...
In order to reduce measurement uncertainty of the (220) lattice spacing of silicon to a few parts pe...
In order to reduce measurement uncertainty of the (220) lattice spacing of silicon to a few parts pe...
A combined X-ray and optical interferometer capable of centimeter displacements has been made to mea...
X-ray phase-contrast topography has been improved by using phase modulation and computing techniques...
In order to achieve the strictest tolerances required in the manufacturing of an x-ray interferomete...
The measurement of the Si lattice parameter by X‐ray interferometry assumes the use of strain‐free c...
Subject of inquiry: plane-parallel, wedge-type (thin and thick) silicon crystals, X-ray interferomet...
Further details are given of an experiment based on combined X-ray and optical interferometry to mea...
The measurement of the angle between an interferometer's front mirror and the diffracting planes is ...
Future measurements of the silicon lattice-parameter by combined X-ray and optical interferometry re...
We have developed a hard x-ray interferometer known in visible and EUV optics as shearing interferom...
ABSTRACT Various amounts of strain and lattice deformation were introduced into <111> Si subst...
The essentials of X-ray interferometry and its principal application fields are reviewed. Very small...
By using the formalism developed in Part I, we investigated errors in the measurement of the silicon...
Highly purified silicon single crystals are excellent standards for length measurements at the atomi...
In order to reduce measurement uncertainty of the (220) lattice spacing of silicon to a few parts pe...
In order to reduce measurement uncertainty of the (220) lattice spacing of silicon to a few parts pe...
A combined X-ray and optical interferometer capable of centimeter displacements has been made to mea...
X-ray phase-contrast topography has been improved by using phase modulation and computing techniques...
In order to achieve the strictest tolerances required in the manufacturing of an x-ray interferomete...
The measurement of the Si lattice parameter by X‐ray interferometry assumes the use of strain‐free c...
Subject of inquiry: plane-parallel, wedge-type (thin and thick) silicon crystals, X-ray interferomet...
Further details are given of an experiment based on combined X-ray and optical interferometry to mea...
The measurement of the angle between an interferometer's front mirror and the diffracting planes is ...
Future measurements of the silicon lattice-parameter by combined X-ray and optical interferometry re...
We have developed a hard x-ray interferometer known in visible and EUV optics as shearing interferom...
ABSTRACT Various amounts of strain and lattice deformation were introduced into <111> Si subst...