XRD and Raman spectroscopic study of Ru and Os doped Bi12SiO20 crystals

Single crystals of Bi12SiO20 doped with Ru and Os (BSO:Ru and BSO:Os) with diameters of about 40 mm and lengths of 80-100 mm were grown by the Czochralski method. Slices of these crystals were studied by polarized Raman spectroscopy. Two-dimensional defects (probably stacking faults) were observed in the central core area of the BSO:Ru crystal by X- ray double crystal traverse topography, while the BSO:Os crystal was probably free of this defect. The specimens from the central part of the ingots were also investigated by single crystal X- ray diffractometry. Conclusions about the crystal perfection based on the research findings, were made