Add to ORKGABSTRACT — AlGaN/GaN high electron mobility transistors (HEMTS on SiC) were characterized before and after SiO2/Si3N4 passivation. DC, small signal, pulsed and large signal measurements were performed. We discuss the role and the influence of passivation on the device performance and characteristics. A good correlation is observed between pulsed and power measurements. At 10GHz, a 6.3W/mm power density with a 36 % PAE at 2dB of compression was obtained after passivation, while only 2.9W/mm before passivation. I
Initially, advances in the high frequency markets were begun by work in Gallium Arsenide systems. In...
passivation. The measured forward drain current of AlGaN/GaN HEMTs before and after SiO2 passivation...
We investigate in detail the influence of AlN passivation on dynamic ON-resistance (R-ON) and electr...
AlGaN/GaN high electron mobility transistors (HEMTS on SiC) were characterized before and after Si...
Performance of intentionally undoped and doped AlGaN/GaN/Si high electron mobility transistors (HEMT...
This paper reports on properties of intentionally undoped AlGaN/GaN/sapphire-based high electron mob...
This paper reports on the use of plasma assisted molecular beam epitaxy of AlGaN/GaN high electron m...
Different influence of SiO2 and Si3N4 passivation on performance of AlGaN=GaN=Si HEMTs is reported. ...
Different influence Of SiO2 and SO4 passivation on performance of AlGaN/GaN/Si HEMTs is reported. DC...
Surface passivation effects were studied on AlGaN/GaN high-electron-mobility transistors (HEMTs) usi...
Intentionally undoped and three different, doped layer structures are used to investigate properties...
The AlGaN/GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrate with SiO2 ...
Wide band gap AlGaN/GaN heterostructure offers the potential for high-electron mobility transistors ...
The effects of thermal storage on GaN-HEMT devices grown on SiC substrate have been investigated by ...
With the ever-increasing demand for high-performance RF/microwave power amplifiers and power switche...
Initially, advances in the high frequency markets were begun by work in Gallium Arsenide systems. In...
passivation. The measured forward drain current of AlGaN/GaN HEMTs before and after SiO2 passivation...
We investigate in detail the influence of AlN passivation on dynamic ON-resistance (R-ON) and electr...
AlGaN/GaN high electron mobility transistors (HEMTS on SiC) were characterized before and after Si...
Performance of intentionally undoped and doped AlGaN/GaN/Si high electron mobility transistors (HEMT...
This paper reports on properties of intentionally undoped AlGaN/GaN/sapphire-based high electron mob...
This paper reports on the use of plasma assisted molecular beam epitaxy of AlGaN/GaN high electron m...
Different influence of SiO2 and Si3N4 passivation on performance of AlGaN=GaN=Si HEMTs is reported. ...
Different influence Of SiO2 and SO4 passivation on performance of AlGaN/GaN/Si HEMTs is reported. DC...
Surface passivation effects were studied on AlGaN/GaN high-electron-mobility transistors (HEMTs) usi...
Intentionally undoped and three different, doped layer structures are used to investigate properties...
The AlGaN/GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrate with SiO2 ...
Wide band gap AlGaN/GaN heterostructure offers the potential for high-electron mobility transistors ...
The effects of thermal storage on GaN-HEMT devices grown on SiC substrate have been investigated by ...
With the ever-increasing demand for high-performance RF/microwave power amplifiers and power switche...
Initially, advances in the high frequency markets were begun by work in Gallium Arsenide systems. In...
passivation. The measured forward drain current of AlGaN/GaN HEMTs before and after SiO2 passivation...
We investigate in detail the influence of AlN passivation on dynamic ON-resistance (R-ON) and electr...