A practical computer simulation of the network models of amorphous semiconductors, us-ing the Monte-Carlo method, has been developed. A randomly chosen atom of the structure is slightly displaced by a random amount and in a random direction. After each move, the potential energy of the amorphous structure is calculated, and the new position is retained in the case of decrease of energy. The iterative procedure was stopped when the energy did not decrease any more. The model is tested by the radial distribution functions before and after the computation and compared to the experimental data from X-ray diffraction
In this paper, we review the principles and the applications of an atomistic simulator for thin film...
Under sufficient permanent random covalent bonding, a fluid of atoms or small molecules is transfor...
Understanding the structural origins of the properties of amorphous materials remains one of the mos...
The subject of this thesis is the class of materials known as disordered solids. These solids are al...
n this work we simulated the growth of amorphous silicon on a substrate of a two-layer-slab of cryst...
A Monte Carlo program for the simulation of the growth of two-dimensional polycrystalline films onto...
We propose here a method to generate random networked amorphous structure using only readily availab...
The most peculiar feature exhibited by $I(V)$ characteristics of amorphous chalcogenides materials ...
An algorithm is described which simulates a random network of corner-sharing octahedra with no dangl...
A thermal procedure and an ab initio molecular-dynamics method based on the Harris functional, appli...
Amorphous graphene is a realization of a two-dimensional Zachariasen glass as first proposed 80 year...
A microscopic particle description of the charge transport process in amorphous GST (a-GST) is prese...
Electric field gradient calculations have been developed in amorphous structures using a point charg...
The growth of amorphous silicon on a substrate of a two-layer slab of crystalline silicon with vario...
A program for the simulation of the nucleation and growth of thin island films on amorphous substrat...
In this paper, we review the principles and the applications of an atomistic simulator for thin film...
Under sufficient permanent random covalent bonding, a fluid of atoms or small molecules is transfor...
Understanding the structural origins of the properties of amorphous materials remains one of the mos...
The subject of this thesis is the class of materials known as disordered solids. These solids are al...
n this work we simulated the growth of amorphous silicon on a substrate of a two-layer-slab of cryst...
A Monte Carlo program for the simulation of the growth of two-dimensional polycrystalline films onto...
We propose here a method to generate random networked amorphous structure using only readily availab...
The most peculiar feature exhibited by $I(V)$ characteristics of amorphous chalcogenides materials ...
An algorithm is described which simulates a random network of corner-sharing octahedra with no dangl...
A thermal procedure and an ab initio molecular-dynamics method based on the Harris functional, appli...
Amorphous graphene is a realization of a two-dimensional Zachariasen glass as first proposed 80 year...
A microscopic particle description of the charge transport process in amorphous GST (a-GST) is prese...
Electric field gradient calculations have been developed in amorphous structures using a point charg...
The growth of amorphous silicon on a substrate of a two-layer slab of crystalline silicon with vario...
A program for the simulation of the nucleation and growth of thin island films on amorphous substrat...
In this paper, we review the principles and the applications of an atomistic simulator for thin film...
Under sufficient permanent random covalent bonding, a fluid of atoms or small molecules is transfor...
Understanding the structural origins of the properties of amorphous materials remains one of the mos...